3-D Monolithic Stacking of Complementary-FET on CMOS for Next Generation Compute-In-Memory SRAM

3-D Monolithic Stacking of Complementary-FET on CMOS for Next Generation Compute-In-Memory SRAM

Monolithic 3D stacking of complementary FET (CFET) SRAM arrays increases integration density multi-fold while supporting the inherent SRAM advantages of low write power and near-infinite endurance. We propose stacking multiple 8-transistor CFET-SRAM layers on regular CMOS periphery to achieve an ult...

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Bibliographic Details
Main Authors: Md. Aftab Baig, Cheng-Jui Yeh, Shu-Wei Chang, Bo-Han Qiu, Xiao-Shan Huang, Cheng-Hsien Tsai, Yu-Ming Chang, Po-Jung Sung, Chun-Jung Su, Ta-Chun Cho, Sourav De, Darsen Lu, Yao-Jen Lee, Wen-Hsi Lee, Wen-Fa Wu, Wen-Kuan Yeh
Format: Article
Language:English
Published: IEEE 2023-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Complementary FET (CFET)
compute-in-memory (CIM)
monolithic 3D integration
SRAM
Online Access:https://ieeexplore.ieee.org/document/9999326/

Internet

https://ieeexplore.ieee.org/document/9999326/

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