Electron-beam lithography on M108Y and M35G chemically amplified DUV photoresists

Electron-beam lithography on M108Y and M35G chemically amplified DUV photoresists

Despite the development of high-end optical lithography systems, electron-beam lithography (EBL) remains the preferred solution for rapid fabrication of deep sub-micrometric features. Although poly-methylmethacrylate (PMMA), HSQ and ZEP remain the most popular resists on the market, a variety of alt...

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Bibliographic Details
Main Authors: Damien Maillard, Zdenek Benes, Niccolò Piacentini, Luis Guillermo Villanueva
Format: Article
Language:English
Published: Elsevier 2021-11-01
Series:Micro and Nano Engineering
Subjects:
Electron-beam lithography
Deep ultraviolet photoresist
Chemically amplified resist
Single-layer lift-off
Online Access:http://www.sciencedirect.com/science/article/pii/S2590007221000162

Internet

http://www.sciencedirect.com/science/article/pii/S2590007221000162

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