Electron-beam lithography on M108Y and M35G chemically amplified DUV photoresists
Despite the development of high-end optical lithography systems, electron-beam lithography (EBL) remains the preferred solution for rapid fabrication of deep sub-micrometric features. Although poly-methylmethacrylate (PMMA), HSQ and ZEP remain the most popular resists on the market, a variety of alt...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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Elsevier
2021-11-01
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| Series: | Micro and Nano Engineering |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2590007221000162 |
| _version_ | 1818404209248174080 |
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| author | Damien Maillard Zdenek Benes Niccolò Piacentini Luis Guillermo Villanueva |
| author_facet | Damien Maillard Zdenek Benes Niccolò Piacentini Luis Guillermo Villanueva |
| author_sort | Damien Maillard |
| collection | DOAJ |
| description | Despite the development of high-end optical lithography systems, electron-beam lithography (EBL) remains the preferred solution for rapid fabrication of deep sub-micrometric features. Although poly-methylmethacrylate (PMMA), HSQ and ZEP remain the most popular resists on the market, a variety of alternatives have emerged, including chemically amplified resists like CSAR. Here, we investigate the use of two resists initially intended for deep ultraviolet (DUV) lithography, namely M108Y and M35G from JSR, as EBL resists. Their chemically amplified nature involves high sensitivity, de facto increasing the throughput. The critical dimensions of each resist are studied, as well as the pattern transfer into the underlying silicon substrate. They yield similar CD performance as ZEP or CSAR; at the same time, they are more resistant than those resists with respect to different dry etching recipes. Overall, the two analyzed DUV photoresists are proven to be valid solutions as alternatives to standard EBL resists. |
| first_indexed | 2024-12-14T08:36:31Z |
| format | Article |
| id | doaj.art-7258cd6a727b421eb5283a0d4a39acf7 |
| institution | Directory Open Access Journal |
| issn | 2590-0072 |
| language | English |
| last_indexed | 2024-12-14T08:36:31Z |
| publishDate | 2021-11-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Micro and Nano Engineering |
| spelling | doaj.art-7258cd6a727b421eb5283a0d4a39acf72022-12-21T23:09:24ZengElsevierMicro and Nano Engineering2590-00722021-11-0113100095Electron-beam lithography on M108Y and M35G chemically amplified DUV photoresistsDamien Maillard0Zdenek Benes1Niccolò Piacentini2Luis Guillermo Villanueva3Advanced NEMS laboratory, École Polytechnique Fédérale de Lausanne, 1015 Lausanne, SwitzerlandCenter of MicroNanoTechnology, École Polytechnique Fédérale de Lausanne, 1015 Lausanne, SwitzerlandCenter of MicroNanoTechnology, École Polytechnique Fédérale de Lausanne, 1015 Lausanne, SwitzerlandAdvanced NEMS laboratory, École Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland; Corresponding author.Despite the development of high-end optical lithography systems, electron-beam lithography (EBL) remains the preferred solution for rapid fabrication of deep sub-micrometric features. Although poly-methylmethacrylate (PMMA), HSQ and ZEP remain the most popular resists on the market, a variety of alternatives have emerged, including chemically amplified resists like CSAR. Here, we investigate the use of two resists initially intended for deep ultraviolet (DUV) lithography, namely M108Y and M35G from JSR, as EBL resists. Their chemically amplified nature involves high sensitivity, de facto increasing the throughput. The critical dimensions of each resist are studied, as well as the pattern transfer into the underlying silicon substrate. They yield similar CD performance as ZEP or CSAR; at the same time, they are more resistant than those resists with respect to different dry etching recipes. Overall, the two analyzed DUV photoresists are proven to be valid solutions as alternatives to standard EBL resists.http://www.sciencedirect.com/science/article/pii/S2590007221000162Electron-beam lithographyDeep ultraviolet photoresistChemically amplified resistSingle-layer lift-off |
| spellingShingle | Damien Maillard Zdenek Benes Niccolò Piacentini Luis Guillermo Villanueva Electron-beam lithography on M108Y and M35G chemically amplified DUV photoresists Micro and Nano Engineering Electron-beam lithography Deep ultraviolet photoresist Chemically amplified resist Single-layer lift-off |
| title | Electron-beam lithography on M108Y and M35G chemically amplified DUV photoresists |
| title_full | Electron-beam lithography on M108Y and M35G chemically amplified DUV photoresists |
| title_fullStr | Electron-beam lithography on M108Y and M35G chemically amplified DUV photoresists |
| title_full_unstemmed | Electron-beam lithography on M108Y and M35G chemically amplified DUV photoresists |
| title_short | Electron-beam lithography on M108Y and M35G chemically amplified DUV photoresists |
| title_sort | electron beam lithography on m108y and m35g chemically amplified duv photoresists |
| topic | Electron-beam lithography Deep ultraviolet photoresist Chemically amplified resist Single-layer lift-off |
| url | http://www.sciencedirect.com/science/article/pii/S2590007221000162 |
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