Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au

Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au

AZO interlayers between n-Ga2O3 and Ti/Au metallization significantly enhance Ohmic contact formation after annealing at ≥ 300°C. Without the presence of the AZO, similar anneals produce only rectifying current-voltage characteristics. Transmission Line Measurements of the Au/Ti/AZO/Ga2O3 stacks sho...

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Bibliographic Details
Main Authors: Patrick H. Carey IV, Jiancheng Yang, F. Ren, David C. Hays, S. J. Pearton, Soohwan Jang, Akito Kuramata, Ivan I. Kravchenko
Format: Article
Language:English
Published: AIP Publishing LLC 2017-09-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4996172

Internet

http://dx.doi.org/10.1063/1.4996172

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