Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au
AZO interlayers between n-Ga2O3 and Ti/Au metallization significantly enhance Ohmic contact formation after annealing at ≥ 300°C. Without the presence of the AZO, similar anneals produce only rectifying current-voltage characteristics. Transmission Line Measurements of the Au/Ti/AZO/Ga2O3 stacks sho...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2017-09-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4996172 |
| _version_ | 1819179832993382400 |
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| author | Patrick H. Carey IV Jiancheng Yang F. Ren David C. Hays S. J. Pearton Soohwan Jang Akito Kuramata Ivan I. Kravchenko |
| author_facet | Patrick H. Carey IV Jiancheng Yang F. Ren David C. Hays S. J. Pearton Soohwan Jang Akito Kuramata Ivan I. Kravchenko |
| author_sort | Patrick H. Carey IV |
| collection | DOAJ |
| description | AZO interlayers between n-Ga2O3 and Ti/Au metallization significantly enhance Ohmic contact formation after annealing at ≥ 300°C. Without the presence of the AZO, similar anneals produce only rectifying current-voltage characteristics. Transmission Line Measurements of the Au/Ti/AZO/Ga2O3 stacks showed the specific contact resistance and transfer resistance decreased sharply from as-deposited values with annealing. The minimum contact resistance and specific contact resistance of 0.42 Ω-mm and 2.82 × 10-5 Ω-cm2 were achieved after a relatively low temperature 400°C annealing. The conduction band offset between AZO and Ga2O3 is 0.79 eV and provides a favorable pathway for improved electron transport across this interface. |
| first_indexed | 2024-12-22T22:04:43Z |
| format | Article |
| id | doaj.art-727658906e094e1192d9ed7f1a44d219 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-22T22:04:43Z |
| publishDate | 2017-09-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-727658906e094e1192d9ed7f1a44d2192022-12-21T18:11:01ZengAIP Publishing LLCAIP Advances2158-32262017-09-0179095313095313-610.1063/1.4996172086708ADVOhmic contacts on n-type β-Ga2O3 using AZO/Ti/AuPatrick H. Carey IV0Jiancheng Yang1F. Ren2David C. Hays3S. J. Pearton4Soohwan Jang5Akito Kuramata6Ivan I. Kravchenko7Department of Chemical Engineering, University of Florida, Gainesville, FL 32611, USADepartment of Chemical Engineering, University of Florida, Gainesville, FL 32611, USADepartment of Chemical Engineering, University of Florida, Gainesville, FL 32611, USADepartment of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USADepartment of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USADepartment of Chemical Engineering, Dankook University, Yongin 16890, KoreaTamura Corporation, Sayama, Saitama 350-1328, Japan and Novel Crystal Technology, Inc., Sayama, Saitama 350-1328, JapanCenter for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830, USAAZO interlayers between n-Ga2O3 and Ti/Au metallization significantly enhance Ohmic contact formation after annealing at ≥ 300°C. Without the presence of the AZO, similar anneals produce only rectifying current-voltage characteristics. Transmission Line Measurements of the Au/Ti/AZO/Ga2O3 stacks showed the specific contact resistance and transfer resistance decreased sharply from as-deposited values with annealing. The minimum contact resistance and specific contact resistance of 0.42 Ω-mm and 2.82 × 10-5 Ω-cm2 were achieved after a relatively low temperature 400°C annealing. The conduction band offset between AZO and Ga2O3 is 0.79 eV and provides a favorable pathway for improved electron transport across this interface.http://dx.doi.org/10.1063/1.4996172 |
| spellingShingle | Patrick H. Carey IV Jiancheng Yang F. Ren David C. Hays S. J. Pearton Soohwan Jang Akito Kuramata Ivan I. Kravchenko Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au AIP Advances |
| title | Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au |
| title_full | Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au |
| title_fullStr | Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au |
| title_full_unstemmed | Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au |
| title_short | Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au |
| title_sort | ohmic contacts on n type β ga2o3 using azo ti au |
| url | http://dx.doi.org/10.1063/1.4996172 |
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