Atomic layer deposition for nanoscale oxide semiconductor thin film transistors: review and outlook
Since the first report of amorphous In–Ga–Zn–O based thin film transistors, interest in oxide semiconductors has grown. They offer high mobility, low off-current, low process temperature, and wide flexibility for compositions and processes. Unfortunately, depositing oxide semiconductors using conven...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2023-01-01
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| Series: | International Journal of Extreme Manufacturing |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/2631-7990/acb46d |