Graphene–Silicon Diode for 2-D Heterostructure Electrical Failure Protection

Graphene–Silicon Diode for 2-D Heterostructure Electrical Failure Protection

Two-dimensional materials have modernized a broad interest in electronic devices. Along with many advantages, their atomic-level thickness makes them sensitive under high electrical stress. This work proposes a protection design using a Graphene/Silicon (Gr/Si) Schottky diode as the protective devic...

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Bibliographic Details
Main Authors: Muhammad Abid Anwar, Munir Ali, Dong Pu, Srikrishna Chanakya Bodepudi, Jianhang Lv, Khurram Shehzad, Xiaochen Wang, Ali Imran, Yuda Zhao, Shurong Dong, Huan Hu, Bin Yu, Yang Xu
Format: Article
Language:English
Published: IEEE 2022-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Protection device
electrical stress
graphene/silicon diode
2D heterostructure PN diode
Online Access:https://ieeexplore.ieee.org/document/9919268/

Internet

https://ieeexplore.ieee.org/document/9919268/

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