Strain-enhanced high Q-factor GaN micro-electromechanical resonator
We report on a highly sensitive gallium nitride (GaN) micro-electromechanical (MEMS) resonator with a record quality factor (Q) exceeding 105 at the high resonant frequency (f) of 911 kHz by the strain engineering for the GaN-on-Si structure. The f of the double-clamped GaN beam bridge is increased...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Taylor & Francis Group
2020-01-01
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| Series: | Science and Technology of Advanced Materials |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1080/14686996.2020.1792257 |