A Novel Interposer Channel Structure with Vertical Tabbed Vias to Reduce Far-End Crosstalk for Next-Generation High-Bandwidth Memory

A Novel Interposer Channel Structure with Vertical Tabbed Vias to Reduce Far-End Crosstalk for Next-Generation High-Bandwidth Memory

In this paper, we propose and analyze a novel interposer channel structure with vertical tabbed vias to achieve high-speed signaling and low-power consumption in high-bandwidth memory (HBM). An analytical model of the self- and mutual capacitance of the proposed interposer channel is suggested and v...

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Bibliographic Details
Main Authors: Hyunwoong Kim, Seonghi Lee, Kyunghwan Song, Yujun Shin, Dongyrul Park, Jongcheol Park, Jaeyong Cho, Seungyoung Ahn
Format: Article
Language:English
Published: MDPI AG 2022-07-01
Series:Micromachines
Subjects:
broadside structure
far-end crosstalk
impedance
interposer channel
silicon interposer
vertical tabbed via
Online Access:https://www.mdpi.com/2072-666X/13/7/1070

Internet

https://www.mdpi.com/2072-666X/13/7/1070

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