MODIFICATION OF SILICON SURFACE UNDER INFLUENCE OF RADIATION OF A NANOSECOND ULTRAVIOLET LASER
The effect of radiation of a nanosecond ultraviolet laser ( λ = 355 nm, pulse duration 10 ns, pulse energy up to 8 mJ, pulse repetition rate – up to 100 Hz) on a silicon single crystal has been investigated by methods of the optical profilometry and scanning electron microscopy. At an energy density...
| Autors principals: | , , , , , , |
|---|---|
| Format: | Article |
| Idioma: | Russian |
| Publicat: |
Tver State University
2020-12-01
|
| Col·lecció: | Физико-химические аспекты изучения кластеров, наноструктур и наноматериалов |
| Matèries: | |
| Accés en línia: | https://physchemaspects.ru/2020/doi-10-26456-pcascnn-2020-12-628/ |