Nanofabrication and Demonstration of a Direct‐Write Microevaporator
Direct‐write vapor deposition is a new technique that would enable one‐step 3D maskless nanofabrication on a variety of substrates. A novel silicon chip‐based microevaporator is developed that allows evaporant to exit through 2000–300 nm nozzles while held at distances comparable to the nozzle diame...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2024-02-01
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| Series: | Small Science |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/smsc.202300121 |
| _version_ | 1797306804728758272 |
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| author | Xella Doi Pavani Vamsi Krishna Nittala Brian Fu Kyaw Zin Latt Suryakant Mishra Luke Silverman Linus Woodard Ralu Divan Supratik Guha |
| author_facet | Xella Doi Pavani Vamsi Krishna Nittala Brian Fu Kyaw Zin Latt Suryakant Mishra Luke Silverman Linus Woodard Ralu Divan Supratik Guha |
| author_sort | Xella Doi |
| collection | DOAJ |
| description | Direct‐write vapor deposition is a new technique that would enable one‐step 3D maskless nanofabrication on a variety of substrates. A novel silicon chip‐based microevaporator is developed that allows evaporant to exit through 2000–300 nm nozzles while held at distances comparable to the nozzle diameter from the substrate by a three‐axis nanopositioning stage in vacuum. This results in a localized deposition on the substrate, which may be scanned relative to the substrate to produce direct‐write patterns. The performance of the microevaporator is tested by creating localized depositions of various materials and the line‐writing potential is demonstrated. The relationship between linewidth and source‐to‐substrate distance is investigated by the application of Knudsen's cosine law and Monte‐Carlo simulations, and then utilized to approximate the source‐to‐substrate distance from performed depositions. |
| first_indexed | 2024-03-08T00:47:07Z |
| format | Article |
| id | doaj.art-72f4b91f01244ac8861ff648b58efe3d |
| institution | Directory Open Access Journal |
| issn | 2688-4046 |
| language | English |
| last_indexed | 2024-03-08T00:47:07Z |
| publishDate | 2024-02-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Small Science |
| spelling | doaj.art-72f4b91f01244ac8861ff648b58efe3d2024-02-15T05:52:51ZengWiley-VCHSmall Science2688-40462024-02-0142n/an/a10.1002/smsc.202300121Nanofabrication and Demonstration of a Direct‐Write MicroevaporatorXella Doi0Pavani Vamsi Krishna Nittala1Brian Fu2Kyaw Zin Latt3Suryakant Mishra4Luke Silverman5Linus Woodard6Ralu Divan7Supratik Guha8Pritzker School of Molecular Engineering University of Chicago Chicago IL 60637 USAPritzker School of Molecular Engineering University of Chicago Chicago IL 60637 USAPritzker School of Molecular Engineering University of Chicago Chicago IL 60637 USAPritzker School of Molecular Engineering University of Chicago Chicago IL 60637 USAMaterials Science Division Argonne National Laboratory Lemont IL 60439 USAPritzker School of Molecular Engineering University of Chicago Chicago IL 60637 USAPritzker School of Molecular Engineering University of Chicago Chicago IL 60637 USACenter for Nanoscale Materials Argonne National Laboratory Lemont IL 60439 USAPritzker School of Molecular Engineering University of Chicago Chicago IL 60637 USADirect‐write vapor deposition is a new technique that would enable one‐step 3D maskless nanofabrication on a variety of substrates. A novel silicon chip‐based microevaporator is developed that allows evaporant to exit through 2000–300 nm nozzles while held at distances comparable to the nozzle diameter from the substrate by a three‐axis nanopositioning stage in vacuum. This results in a localized deposition on the substrate, which may be scanned relative to the substrate to produce direct‐write patterns. The performance of the microevaporator is tested by creating localized depositions of various materials and the line‐writing potential is demonstrated. The relationship between linewidth and source‐to‐substrate distance is investigated by the application of Knudsen's cosine law and Monte‐Carlo simulations, and then utilized to approximate the source‐to‐substrate distance from performed depositions.https://doi.org/10.1002/smsc.202300121direct writeheterogeneous integrationhigh-aspect-ratio etchnanofabricationphysical vapor deposition |
| spellingShingle | Xella Doi Pavani Vamsi Krishna Nittala Brian Fu Kyaw Zin Latt Suryakant Mishra Luke Silverman Linus Woodard Ralu Divan Supratik Guha Nanofabrication and Demonstration of a Direct‐Write Microevaporator Small Science direct write heterogeneous integration high-aspect-ratio etch nanofabrication physical vapor deposition |
| title | Nanofabrication and Demonstration of a Direct‐Write Microevaporator |
| title_full | Nanofabrication and Demonstration of a Direct‐Write Microevaporator |
| title_fullStr | Nanofabrication and Demonstration of a Direct‐Write Microevaporator |
| title_full_unstemmed | Nanofabrication and Demonstration of a Direct‐Write Microevaporator |
| title_short | Nanofabrication and Demonstration of a Direct‐Write Microevaporator |
| title_sort | nanofabrication and demonstration of a direct write microevaporator |
| topic | direct write heterogeneous integration high-aspect-ratio etch nanofabrication physical vapor deposition |
| url | https://doi.org/10.1002/smsc.202300121 |
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