The influence mechanism of rare earth element doping on the electron/phonon transport performances of In2O3 based thermoelectric materials

The influence mechanism of rare earth element doping on the electron/phonon transport performances of In2O3 based thermoelectric materials

In2O3 based materials are one of the most promising high-temperature thermoelectric materials for application. Herein, Sm doped In2O3 samples were prepared by mechanical alloying, high-temperature calcination, and discharge plasma sintering, and the influence mechanism of rare earth element doping o...

Full description

Bibliographic Details
Main Authors: Xinqi She, Tongqiang Xiong, Zhibin Wang, Guoji Cai, Yonghong Chen, Yong Sun, ZhiPeng Zheng, Guopeng Zhou, Bo Feng
Format: Article
Language:English
Published: Elsevier 2024-05-01
Series:Results in Physics
Subjects:
Impurity level
Rare-earth element
Electron transport
Thermoelectric materials
Online Access:http://www.sciencedirect.com/science/article/pii/S2211379724003437

Internet

http://www.sciencedirect.com/science/article/pii/S2211379724003437

Similar Items