Analysis of asymmetrical hysteresis phenomena observed in TMD-based field effect transistors
To realize field effect transistors with multi-layered MoS2 and WSe2 (hereafter denoted as MoS2 FET and WSe2 FET), many device instability problems should be surmounted, such as the hysteresis generation of the devices. In order to clarify the mechanism of the asymmetrical hysteresis phenomena obser...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2018-09-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5050174 |