Analysis of asymmetrical hysteresis phenomena observed in TMD-based field effect transistors
To realize field effect transistors with multi-layered MoS2 and WSe2 (hereafter denoted as MoS2 FET and WSe2 FET), many device instability problems should be surmounted, such as the hysteresis generation of the devices. In order to clarify the mechanism of the asymmetrical hysteresis phenomena obser...
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2018-09-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5050174 |
| _version_ | 1828450785494564864 |
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| author | Juhyung Kim Jaewon Jeong Sanghyun Lee Seokwon Jeong Yonghan Roh |
| author_facet | Juhyung Kim Jaewon Jeong Sanghyun Lee Seokwon Jeong Yonghan Roh |
| author_sort | Juhyung Kim |
| collection | DOAJ |
| description | To realize field effect transistors with multi-layered MoS2 and WSe2 (hereafter denoted as MoS2 FET and WSe2 FET), many device instability problems should be surmounted, such as the hysteresis generation of the devices. In order to clarify the mechanism of the asymmetrical hysteresis phenomena observed in the transfer characteristics of the MoS2 and WSe2 FET, the temperature dependencies of their characteristics are analyzed. Based on these analyses, it can be concluded that donor-like traps present in both the SiO2/MoS2 interface and the MoS2 bulk in multi-layered MoS2 FETs, and that acceptor-like traps present in both the SiO2/WSe2 interface, and the WSe2 bulk in multi-layered WSe2 FETs. Furthermore, based on the chemical analyses and the arguments presented in previous studies, we propose that the sulfur vacancy (SV) is the origin of donor-like traps present in MoS2, and the tungsten vacancy (TV) is the origin of acceptor-like traps present in WSe2. This work may provide a potential clue to overcome many practical problems for realization of the transition metal dichalcogenides (TMDs) based FETs. |
| first_indexed | 2024-12-10T23:28:05Z |
| format | Article |
| id | doaj.art-7330e7652e4f4d2cae90c4088909aa96 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-10T23:28:05Z |
| publishDate | 2018-09-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-7330e7652e4f4d2cae90c4088909aa962022-12-22T01:29:30ZengAIP Publishing LLCAIP Advances2158-32262018-09-0189095114095114-910.1063/1.5050174084809ADVAnalysis of asymmetrical hysteresis phenomena observed in TMD-based field effect transistorsJuhyung Kim0Jaewon Jeong1Sanghyun Lee2Seokwon Jeong3Yonghan Roh4Department of Semiconductor and Display Engineering, College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746, South KoreaSchool of Electronic and Electrical Engineering, College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746, South KoreaSchool of Electronic and Electrical Engineering, College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746, South KoreaSchool of Electronic and Electrical Engineering, College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746, South KoreaDepartment of Semiconductor and Display Engineering, College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746, South KoreaTo realize field effect transistors with multi-layered MoS2 and WSe2 (hereafter denoted as MoS2 FET and WSe2 FET), many device instability problems should be surmounted, such as the hysteresis generation of the devices. In order to clarify the mechanism of the asymmetrical hysteresis phenomena observed in the transfer characteristics of the MoS2 and WSe2 FET, the temperature dependencies of their characteristics are analyzed. Based on these analyses, it can be concluded that donor-like traps present in both the SiO2/MoS2 interface and the MoS2 bulk in multi-layered MoS2 FETs, and that acceptor-like traps present in both the SiO2/WSe2 interface, and the WSe2 bulk in multi-layered WSe2 FETs. Furthermore, based on the chemical analyses and the arguments presented in previous studies, we propose that the sulfur vacancy (SV) is the origin of donor-like traps present in MoS2, and the tungsten vacancy (TV) is the origin of acceptor-like traps present in WSe2. This work may provide a potential clue to overcome many practical problems for realization of the transition metal dichalcogenides (TMDs) based FETs.http://dx.doi.org/10.1063/1.5050174 |
| spellingShingle | Juhyung Kim Jaewon Jeong Sanghyun Lee Seokwon Jeong Yonghan Roh Analysis of asymmetrical hysteresis phenomena observed in TMD-based field effect transistors AIP Advances |
| title | Analysis of asymmetrical hysteresis phenomena observed in TMD-based field effect transistors |
| title_full | Analysis of asymmetrical hysteresis phenomena observed in TMD-based field effect transistors |
| title_fullStr | Analysis of asymmetrical hysteresis phenomena observed in TMD-based field effect transistors |
| title_full_unstemmed | Analysis of asymmetrical hysteresis phenomena observed in TMD-based field effect transistors |
| title_short | Analysis of asymmetrical hysteresis phenomena observed in TMD-based field effect transistors |
| title_sort | analysis of asymmetrical hysteresis phenomena observed in tmd based field effect transistors |
| url | http://dx.doi.org/10.1063/1.5050174 |
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