Electronic transport properties of a-Si:H
To investigate the electron transport properties of hydrogenated amorphous silicon (a-Si:H), a series of quantum simulations and electron transport analyses were performed. The target system is a nano-scale junction of a-Si:H with various hydrogen concentrations sandwiched between two metal electrod...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2022-03-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0079701 |