Segregation mechanism of arsenic dopants at grain boundaries in silicon

Segregation mechanism of arsenic dopants at grain boundaries in silicon

Three-dimensional distribution of arsenic (As) dopants at Σ3{111}, Σ9{221}, Σ9{114}, and Σ9{111}/{115} grain boundaries (GBs) in silicon (Si) is examined by correlative analytical methods using atom probe tomography (APT) combined with low-temperature focused ion beam (LT-FIB), scanning transmission...

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Bibliographic Details
Main Authors: Yutaka Ohno, Tatsuya Yokoi, Yasuo Shimizu, Jie Ren, Koji Inoue, Yasuyoshi Nagai, Kentaro Kutsukake, Kozo Fujiwara, Atsutomo Nakamura, Katsuyuki Matsunaga, Hideto Yoshida
Format: Article
Language:English
Published: Taylor & Francis Group 2021-01-01
Series:Science and Technology of Advanced Materials: Methods
Subjects:
grain boundary segregation
silicon
coincident site lattice (csl)
atom probe tomography (apt)
ab initio calculations
Online Access:http://dx.doi.org/10.1080/27660400.2021.1969701

Internet

http://dx.doi.org/10.1080/27660400.2021.1969701

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