Bipolar Effects in Photovoltage of Metamorphic InAs/InGaAs/GaAs Quantum Dot Heterostructures: Characterization and Design Solutions for Light-Sensitive Devices

Bipolar Effects in Photovoltage of Metamorphic InAs/InGaAs/GaAs Quantum Dot Heterostructures: Characterization and Design Solutions for Light-Sensitive Devices

Abstract The bipolar effect of GaAs substrate and nearby layers on photovoltage of vertical metamorphic InAs/InGaAs in comparison with pseudomorphic (conventional) InAs/GaAs quantum dot (QD) structures were studied. Both metamorphic and pseudomorphic structures were grown by molecular beam epitaxy,...

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Détails bibliographiques
Auteurs principaux: Sergii Golovynskyi, Luca Seravalli, Oleksandr Datsenko, Oleksii Kozak, Serhiy V. Kondratenko, Giovanna Trevisi, Paola Frigeri, Enos Gombia, Sergii R. Lavoryk, Iuliia Golovynska, Tymish Y. Ohulchanskyy, Junle Qu
Format: Article
Langue:English
Publié: SpringerOpen 2017-10-01
Collection:Nanoscale Research Letters
Sujets:
Nanostructure
Quantum dot
Metamorphic
InAs/InGaAs
Photovoltage
Photoconductivity
Accès en ligne:http://link.springer.com/article/10.1186/s11671-017-2331-2

Internet

http://link.springer.com/article/10.1186/s11671-017-2331-2

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