Intrinsic Charge Trapping and Reversible Charge Induced Structural Modifications in a‐Si3N4
Abstract Amorphous silicon nitride (a‐Si3N4) is an essential material for a wide variety of electronic devices, ranging from its use in dielectric layers to its paramount importance for memory applications. In particular, the latter has triggered the interest in charge trapping, for which so‐called...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2024-02-01
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| Series: | Advanced Physics Research |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/apxr.202300109 |