INFLUENCE OF ULTRASONIC ACTION ON THE RATE OF CHARGE FORMATION OF THE INVERSION LAYER IN METAL-GLASS-SEMICONDUCTOR STRUCTURES

INFLUENCE OF ULTRASONIC ACTION ON THE RATE OF CHARGE FORMATION OF THE INVERSION LAYER IN METAL-GLASS-SEMICONDUCTOR STRUCTURES

The effect of ultrasonic action on the density of electronic states localized at the Si-glass interface is studied. A method is proposed for determining the surface and volume generation rates of charge carriers using the calculated time dependence of the space charge region width (SCR) when compari...

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Bibliographic Details
Main Authors: В. H. Kuchkarov, O. O. Mamatkarimov
Format: Article
Language:English
Published: KamGU by Vitus Bering 2019-11-01
Series:Vestnik KRAUNC: Fiziko-Matematičeskie Nauki
Subjects:
ultrasonic irradiation
cv characteristics
localized states
relaxation
carrier generation
dielectric loss
interfaces
isothermal relaxation of capacitance
Online Access:http://krasec.ru/wp-content/uploads/2020/01/%D0%9A%D1%83%D1%87%D0%BA%D0%B0%D1%80%D0%BE%D0%B2.pdf

Internet

http://krasec.ru/wp-content/uploads/2020/01/%D0%9A%D1%83%D1%87%D0%BA%D0%B0%D1%80%D0%BE%D0%B2.pdf

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