Threshold Switching in Forming-Free Anodic Memristors Grown on Hf–Nb Combinatorial Thin-Film Alloys

Threshold Switching in Forming-Free Anodic Memristors Grown on Hf–Nb Combinatorial Thin-Film Alloys

The development of novel materials with coexisting volatile threshold and non-volatile memristive switching is crucial for neuromorphic applications. Hence, the aim of this work was to investigate the memristive properties of oxides in a Hf–Nb thin-film combinatorial system deposited by sputtering o...

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Bibliographic Details
Main Authors: Ivana Zrinski, Janez Zavašnik, Jiri Duchoslav, Achim Walter Hassel, Andrei Ionut Mardare
Format: Article
Language:English
Published: MDPI AG 2022-11-01
Series:Nanomaterials
Subjects:
anodic memristors
valve metals
combinatorial analysis
Online Access:https://www.mdpi.com/2079-4991/12/22/3944

Internet

https://www.mdpi.com/2079-4991/12/22/3944

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