Design considerations of a novel Triple Oxide Trench Deep Gate LDMOS to improve self‐heating effect and breakdown voltage

Design considerations of a novel Triple Oxide Trench Deep Gate LDMOS to improve self‐heating effect and breakdown voltage

Abstract In this study, design considerations of a new device structure are presented to improve the self‐heating effect (SHE) and the breakdown voltage of the Deep Gate LDMOS (Lateral Double Diffused Metal Oxide Semiconductor) transistor and compared with a conventional LDMOS (C‐LDMOS). In this cas...

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Bibliographic Details
Main Authors: Amir Gavoshani, Ali A. Orouji
Format: Article
Language:English
Published: Hindawi-IET 2022-05-01
Series:IET Circuits, Devices and Systems
Subjects:
breakdown voltage
deep gate
lattice temperature
LDMOS
self‐heating effect
specific on‐resistance
Online Access:https://doi.org/10.1049/cds2.12102

Internet

https://doi.org/10.1049/cds2.12102

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