Design considerations of a novel Triple Oxide Trench Deep Gate LDMOS to improve self‐heating effect and breakdown voltage
Abstract In this study, design considerations of a new device structure are presented to improve the self‐heating effect (SHE) and the breakdown voltage of the Deep Gate LDMOS (Lateral Double Diffused Metal Oxide Semiconductor) transistor and compared with a conventional LDMOS (C‐LDMOS). In this cas...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
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Hindawi-IET
2022-05-01
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| Series: | IET Circuits, Devices and Systems |
| Subjects: | |
| Online Access: | https://doi.org/10.1049/cds2.12102 |
| _version_ | 1797428602639220736 |
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| author | Amir Gavoshani Ali A. Orouji |
| author_facet | Amir Gavoshani Ali A. Orouji |
| author_sort | Amir Gavoshani |
| collection | DOAJ |
| description | Abstract In this study, design considerations of a new device structure are presented to improve the self‐heating effect (SHE) and the breakdown voltage of the Deep Gate LDMOS (Lateral Double Diffused Metal Oxide Semiconductor) transistor and compared with a conventional LDMOS (C‐LDMOS). In this case, triple oxide trenches with an N+ trench are embedded in the drift region. These trenches create additional peaks in the electric field profile, so the electric field is modified. The authors demonstrate that by optimising the trenches, the breakdown voltage of the device increases. Also, a partially buried oxide is used in the proposed structure to create a conduction path that significantly reduces the SHE. Moreover, the results indicate that the specific on‐resistance, lattice temperature, and breakdown voltage of the proposed device are improved considerably compared to the C‐LDMOS. |
| first_indexed | 2024-03-09T09:00:14Z |
| format | Article |
| id | doaj.art-73b6aef2545b41d7b88bc6613d24539f |
| institution | Directory Open Access Journal |
| issn | 1751-858X 1751-8598 |
| language | English |
| last_indexed | 2024-03-09T09:00:14Z |
| publishDate | 2022-05-01 |
| publisher | Hindawi-IET |
| record_format | Article |
| series | IET Circuits, Devices and Systems |
| spelling | doaj.art-73b6aef2545b41d7b88bc6613d24539f2023-12-02T11:49:01ZengHindawi-IETIET Circuits, Devices and Systems1751-858X1751-85982022-05-0116327227910.1049/cds2.12102Design considerations of a novel Triple Oxide Trench Deep Gate LDMOS to improve self‐heating effect and breakdown voltageAmir Gavoshani0Ali A. Orouji1Electrical and Computer Engineering Department Semnan University Semnan IranElectrical and Computer Engineering Department Semnan University Semnan IranAbstract In this study, design considerations of a new device structure are presented to improve the self‐heating effect (SHE) and the breakdown voltage of the Deep Gate LDMOS (Lateral Double Diffused Metal Oxide Semiconductor) transistor and compared with a conventional LDMOS (C‐LDMOS). In this case, triple oxide trenches with an N+ trench are embedded in the drift region. These trenches create additional peaks in the electric field profile, so the electric field is modified. The authors demonstrate that by optimising the trenches, the breakdown voltage of the device increases. Also, a partially buried oxide is used in the proposed structure to create a conduction path that significantly reduces the SHE. Moreover, the results indicate that the specific on‐resistance, lattice temperature, and breakdown voltage of the proposed device are improved considerably compared to the C‐LDMOS.https://doi.org/10.1049/cds2.12102breakdown voltagedeep gatelattice temperatureLDMOSself‐heating effectspecific on‐resistance |
| spellingShingle | Amir Gavoshani Ali A. Orouji Design considerations of a novel Triple Oxide Trench Deep Gate LDMOS to improve self‐heating effect and breakdown voltage IET Circuits, Devices and Systems breakdown voltage deep gate lattice temperature LDMOS self‐heating effect specific on‐resistance |
| title | Design considerations of a novel Triple Oxide Trench Deep Gate LDMOS to improve self‐heating effect and breakdown voltage |
| title_full | Design considerations of a novel Triple Oxide Trench Deep Gate LDMOS to improve self‐heating effect and breakdown voltage |
| title_fullStr | Design considerations of a novel Triple Oxide Trench Deep Gate LDMOS to improve self‐heating effect and breakdown voltage |
| title_full_unstemmed | Design considerations of a novel Triple Oxide Trench Deep Gate LDMOS to improve self‐heating effect and breakdown voltage |
| title_short | Design considerations of a novel Triple Oxide Trench Deep Gate LDMOS to improve self‐heating effect and breakdown voltage |
| title_sort | design considerations of a novel triple oxide trench deep gate ldmos to improve self heating effect and breakdown voltage |
| topic | breakdown voltage deep gate lattice temperature LDMOS self‐heating effect specific on‐resistance |
| url | https://doi.org/10.1049/cds2.12102 |
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