Design considerations of a novel Triple Oxide Trench Deep Gate LDMOS to improve self‐heating effect and breakdown voltage
Abstract In this study, design considerations of a new device structure are presented to improve the self‐heating effect (SHE) and the breakdown voltage of the Deep Gate LDMOS (Lateral Double Diffused Metal Oxide Semiconductor) transistor and compared with a conventional LDMOS (C‐LDMOS). In this cas...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Hindawi-IET
2022-05-01
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| Series: | IET Circuits, Devices and Systems |
| Subjects: | |
| Online Access: | https://doi.org/10.1049/cds2.12102 |