Analysis of Total Ionizing Dose Effects on 0.13µm Technology-Temperature-Compensated Voltage References

http://dx.doi.org/10.5028/jatm.v5i3.227 The purpose of this work is to briefly discuss the effects of the total ionizing dose (TID) on MOS devices in order to estimate the results of future irradiation tests on temperature-compensated voltage references that are implemented on a mixed-signal chip f...

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Bibliographic Details
Main Authors: Thiago Hanna Both, Dalton Colombo, Ricardo Vanni Dallasen, Gilson Inácio Wirth
Format: Article
Language:English
Published: Instituto de Aeronáutica e Espaço (IAE) 2013-08-01
Series:Journal of Aerospace Technology and Management
Subjects:
Online Access:https://www.jatm.com.br/jatm/article/view/227