Analysis of Total Ionizing Dose Effects on 0.13µm Technology-Temperature-Compensated Voltage References

http://dx.doi.org/10.5028/jatm.v5i3.227 The purpose of this work is to briefly discuss the effects of the total ionizing dose (TID) on MOS devices in order to estimate the results of future irradiation tests on temperature-compensated voltage references that are implemented on a mixed-signal chip f...

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Main Authors: Thiago Hanna Both, Dalton Colombo, Ricardo Vanni Dallasen, Gilson Inácio Wirth
Format: Article
Language:English
Published: Instituto de Aeronáutica e Espaço (IAE) 2013-08-01
Series:Journal of Aerospace Technology and Management
Subjects:
Online Access:https://www.jatm.com.br/jatm/article/view/227
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author Thiago Hanna Both
Dalton Colombo
Ricardo Vanni Dallasen
Gilson Inácio Wirth
author_facet Thiago Hanna Both
Dalton Colombo
Ricardo Vanni Dallasen
Gilson Inácio Wirth
author_sort Thiago Hanna Both
collection DOAJ
description http://dx.doi.org/10.5028/jatm.v5i3.227 The purpose of this work is to briefly discuss the effects of the total ionizing dose (TID) on MOS devices in order to estimate the results of future irradiation tests on temperature-compensated voltage references that are implemented on a mixed-signal chip fabricated using IBM 0.13 μm technology. The analysis will mainly focus on the effects of the parametric variations on different voltage references. Monte-Carlo analyses were performed in order to determine the effects of threshold voltage shifts in each transistor on the output voltage.
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spelling doaj.art-73b78961d1584a878c6df264ea603a5b2022-12-22T03:04:57ZengInstituto de Aeronáutica e Espaço (IAE)Journal of Aerospace Technology and Management2175-91462013-08-0153Analysis of Total Ionizing Dose Effects on 0.13µm Technology-Temperature-Compensated Voltage ReferencesThiago Hanna Both0Dalton Colombo1Ricardo Vanni Dallasen2Gilson Inácio Wirth3PGMICRO - Universidade Federal do Rio Grande do Sul (UFRGS)PGMicro - Universidade Federal do Rio Grande do Sul (UFRGS)PPGEE - Universidade Federal do Rio Grande do Sul (UFRGS)PGMicro - Universidade Federal do Rio Grande do Sul (UFRGS) http://dx.doi.org/10.5028/jatm.v5i3.227 The purpose of this work is to briefly discuss the effects of the total ionizing dose (TID) on MOS devices in order to estimate the results of future irradiation tests on temperature-compensated voltage references that are implemented on a mixed-signal chip fabricated using IBM 0.13 μm technology. The analysis will mainly focus on the effects of the parametric variations on different voltage references. Monte-Carlo analyses were performed in order to determine the effects of threshold voltage shifts in each transistor on the output voltage. https://www.jatm.com.br/jatm/article/view/227Ionizing doseRadiationTIDVoltage reference
spellingShingle Thiago Hanna Both
Dalton Colombo
Ricardo Vanni Dallasen
Gilson Inácio Wirth
Analysis of Total Ionizing Dose Effects on 0.13µm Technology-Temperature-Compensated Voltage References
Journal of Aerospace Technology and Management
Ionizing dose
Radiation
TID
Voltage reference
title Analysis of Total Ionizing Dose Effects on 0.13µm Technology-Temperature-Compensated Voltage References
title_full Analysis of Total Ionizing Dose Effects on 0.13µm Technology-Temperature-Compensated Voltage References
title_fullStr Analysis of Total Ionizing Dose Effects on 0.13µm Technology-Temperature-Compensated Voltage References
title_full_unstemmed Analysis of Total Ionizing Dose Effects on 0.13µm Technology-Temperature-Compensated Voltage References
title_short Analysis of Total Ionizing Dose Effects on 0.13µm Technology-Temperature-Compensated Voltage References
title_sort analysis of total ionizing dose effects on 0 13µm technology temperature compensated voltage references
topic Ionizing dose
Radiation
TID
Voltage reference
url https://www.jatm.com.br/jatm/article/view/227
work_keys_str_mv AT thiagohannaboth analysisoftotalionizingdoseeffectson013μmtechnologytemperaturecompensatedvoltagereferences
AT daltoncolombo analysisoftotalionizingdoseeffectson013μmtechnologytemperaturecompensatedvoltagereferences
AT ricardovannidallasen analysisoftotalionizingdoseeffectson013μmtechnologytemperaturecompensatedvoltagereferences
AT gilsoninaciowirth analysisoftotalionizingdoseeffectson013μmtechnologytemperaturecompensatedvoltagereferences