Design and Investigation of the High Performance Doping-Less TFET with Ge/Si<sub>0.6</sub>Ge<sub>0.4</sub>/Si Heterojunction
A high performance doping-less tunneling field effect transistor with Ge/Si<sub>0.6</sub>Ge<sub>0.4</sub>/Si heterojunction (H-DLTFET) is proposed in this paper. Compared to the conventional doping-less tunneling field effect transistor (DLTFET), the source and channel region...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2019-06-01
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| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/10/6/424 |