In Situ Reconnection of Nanoelectrodes Over 20 nm Gaps on Polyimide Substrate
The current densities in nowadays electronic circuitry are close to the electromigration threshold that may result in the fracture of circuits due to electromigration, hampering further miniaturization of integrated chips. Flexible electronic devices, which use a flexible material instead of rigid s...
| Main Authors: | , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2024-02-01
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| Series: | Small Structures |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/sstr.202300283 |
| _version_ | 1797321033837969408 |
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| author | Xubin Zhang Zhibin Zhao Surong Zhang Adila Adijiang Tianran Zhao Min Tan Xueyan Zhao Qihong Hu Maoning Wang Takhee Lee Elke Scheer Dong Xiang |
| author_facet | Xubin Zhang Zhibin Zhao Surong Zhang Adila Adijiang Tianran Zhao Min Tan Xueyan Zhao Qihong Hu Maoning Wang Takhee Lee Elke Scheer Dong Xiang |
| author_sort | Xubin Zhang |
| collection | DOAJ |
| description | The current densities in nowadays electronic circuitry are close to the electromigration threshold that may result in the fracture of circuits due to electromigration, hampering further miniaturization of integrated chips. Flexible electronic devices, which use a flexible material instead of rigid silicon as a substrate, might be prone to fracture problems also due to obligatory mechanical deformation. However, finding the location of fractured nanogaps and in situ repairing such atomic‐scale fractured circuits are currently unavailable. To this end, a method is developed to in situ heal nanogaps as large as 20 nm between metallic electrodes on the polyimide (PI)‐covered substrate via voltage sweeping, which is typically employed to generate nanogaps rather than heal nanogaps. The reconnection of nanoelectrodes is realized only when the underneath PI is treated with oxygen plasma etching. Assisted by X‐ray photoelectron spectroscopy, it is revealed that inductively coupled O2 plasma etching not only changes the surface topography but also changes the chemical binding structure of PI, which in return can be used to immobilize metal atoms migrating along the PI surface to gradually close the nanogap, providing an in situ self‐healing paradigm for repairing the atomic scale fractured circuits. |
| first_indexed | 2024-03-08T04:51:40Z |
| format | Article |
| id | doaj.art-73f8f20d3efe4f429a67c77576efecba |
| institution | Directory Open Access Journal |
| issn | 2688-4062 |
| language | English |
| last_indexed | 2024-03-08T04:51:40Z |
| publishDate | 2024-02-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Small Structures |
| spelling | doaj.art-73f8f20d3efe4f429a67c77576efecba2024-02-08T03:06:33ZengWiley-VCHSmall Structures2688-40622024-02-0152n/an/a10.1002/sstr.202300283In Situ Reconnection of Nanoelectrodes Over 20 nm Gaps on Polyimide SubstrateXubin Zhang0Zhibin Zhao1Surong Zhang2Adila Adijiang3Tianran Zhao4Min Tan5Xueyan Zhao6Qihong Hu7Maoning Wang8Takhee Lee9Elke Scheer10Dong Xiang11Institute of Modern Optics and Center of Single-Molecule Science Tianjin Key Laboratory of Micro-scale Optical Information Science and Technology Nankai University Tianjin 300350 ChinaInstitute of Modern Optics and Center of Single-Molecule Science Tianjin Key Laboratory of Micro-scale Optical Information Science and Technology Nankai University Tianjin 300350 ChinaInstitute of Modern Optics and Center of Single-Molecule Science Tianjin Key Laboratory of Micro-scale Optical Information Science and Technology Nankai University Tianjin 300350 ChinaInstitute of Modern Optics and Center of Single-Molecule Science Tianjin Key Laboratory of Micro-scale Optical Information Science and Technology Nankai University Tianjin 300350 ChinaInstitute of Modern Optics and Center of Single-Molecule Science Tianjin Key Laboratory of Micro-scale Optical Information Science and Technology Nankai University Tianjin 300350 ChinaInstitute of Modern Optics and Center of Single-Molecule Science Tianjin Key Laboratory of Micro-scale Optical Information Science and Technology Nankai University Tianjin 300350 ChinaInstitute of Modern Optics and Center of Single-Molecule Science Tianjin Key Laboratory of Micro-scale Optical Information Science and Technology Nankai University Tianjin 300350 ChinaInstitute of Modern Optics and Center of Single-Molecule Science Tianjin Key Laboratory of Micro-scale Optical Information Science and Technology Nankai University Tianjin 300350 ChinaInstitute of Modern Optics and Center of Single-Molecule Science Tianjin Key Laboratory of Micro-scale Optical Information Science and Technology Nankai University Tianjin 300350 ChinaDepartment of Physics and Astronomy, and Institute of Applied Physics Seoul National University Seoul 08826 KoreaDepartment of Physics University of Konstanz 78457 Konstanz GermanyInstitute of Modern Optics and Center of Single-Molecule Science Tianjin Key Laboratory of Micro-scale Optical Information Science and Technology Nankai University Tianjin 300350 ChinaThe current densities in nowadays electronic circuitry are close to the electromigration threshold that may result in the fracture of circuits due to electromigration, hampering further miniaturization of integrated chips. Flexible electronic devices, which use a flexible material instead of rigid silicon as a substrate, might be prone to fracture problems also due to obligatory mechanical deformation. However, finding the location of fractured nanogaps and in situ repairing such atomic‐scale fractured circuits are currently unavailable. To this end, a method is developed to in situ heal nanogaps as large as 20 nm between metallic electrodes on the polyimide (PI)‐covered substrate via voltage sweeping, which is typically employed to generate nanogaps rather than heal nanogaps. The reconnection of nanoelectrodes is realized only when the underneath PI is treated with oxygen plasma etching. Assisted by X‐ray photoelectron spectroscopy, it is revealed that inductively coupled O2 plasma etching not only changes the surface topography but also changes the chemical binding structure of PI, which in return can be used to immobilize metal atoms migrating along the PI surface to gradually close the nanogap, providing an in situ self‐healing paradigm for repairing the atomic scale fractured circuits.https://doi.org/10.1002/sstr.202300283metal atom trappingnanoelectrodesO2 plasma etchingself-healingX-ray photoelectron spectroscopy |
| spellingShingle | Xubin Zhang Zhibin Zhao Surong Zhang Adila Adijiang Tianran Zhao Min Tan Xueyan Zhao Qihong Hu Maoning Wang Takhee Lee Elke Scheer Dong Xiang In Situ Reconnection of Nanoelectrodes Over 20 nm Gaps on Polyimide Substrate Small Structures metal atom trapping nanoelectrodes O2 plasma etching self-healing X-ray photoelectron spectroscopy |
| title | In Situ Reconnection of Nanoelectrodes Over 20 nm Gaps on Polyimide Substrate |
| title_full | In Situ Reconnection of Nanoelectrodes Over 20 nm Gaps on Polyimide Substrate |
| title_fullStr | In Situ Reconnection of Nanoelectrodes Over 20 nm Gaps on Polyimide Substrate |
| title_full_unstemmed | In Situ Reconnection of Nanoelectrodes Over 20 nm Gaps on Polyimide Substrate |
| title_short | In Situ Reconnection of Nanoelectrodes Over 20 nm Gaps on Polyimide Substrate |
| title_sort | in situ reconnection of nanoelectrodes over 20 nm gaps on polyimide substrate |
| topic | metal atom trapping nanoelectrodes O2 plasma etching self-healing X-ray photoelectron spectroscopy |
| url | https://doi.org/10.1002/sstr.202300283 |
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