On the extraction of threshold voltage, effective channel length and series resistance of MOSFETs
The first part of this article presents the modeling of the long-channel bulk MOSFET as a particular case of the SOI MOSFET. The second part reviews compares and scrutinizes various methods to extract the threshold voltage, the effective channel and the individual values of drain and source resista...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
National Institute of Telecommunications
2000-12-01
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| Series: | Journal of Telecommunications and Information Technology |
| Subjects: | |
| Online Access: | https://jtit.pl/jtit/article/view/28 |