Band alignment engineering at ultra-wide bandgap GeO2/SiO2 heterointerfaces
Owing to the tremendous contribution for the carrier transport across the interface, the band alignment engineering in oxide semiconductor heterojunctions (OSHs) is of vital importance for developing oxide semiconductor optoelectronic devices. Here, we have deposited a series of ultra-wide bandgap G...
| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2024-03-01
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| Series: | Results in Physics |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2211379724002213 |