Strain Driven Electrical Bandgap Tuning of Atomically Thin WSe2

Strain Driven Electrical Bandgap Tuning of Atomically Thin WSe2

Abstract Tuning electrical properties of 2D materials through mechanical strain has predominantly focused on n‐type 2D materials like MoS2 and WS2, while p‐type 2D materials such as WSe2 remain relatively unexplored. Here, the impact of controlled mechanical strain on the electron transport characte...

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Bibliographic Details
Main Authors: Md Akibul Islam, Eric Nicholson, Nima Barri, Momoko Onodera, Danny Starkov, Peter Serles, Shuo He, Boran Kumral, Ali Zavabeti, Haleh Shahsa, Teng Cui, Guorui Wang, Tomoki Machida, C.V. Singh, Tobin Filleter
Format: Article
Language:English
Published: Wiley-VCH 2024-11-01
Series:Advanced Electronic Materials
Subjects:
bandgap tuning
cAFM
strain engineering
transition metal di chalcogenides (TMDs)
Online Access:https://doi.org/10.1002/aelm.202400225

Internet

https://doi.org/10.1002/aelm.202400225

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