Enhanced Device Performance of GaInN-Based Green Light-Emitting Diode with Sputtered AlN Buffer Layer

Enhanced Device Performance of GaInN-Based Green Light-Emitting Diode with Sputtered AlN Buffer Layer

In this study, we compared the device performance of GaInN-based green LEDs grown on <i>c</i>-plane sapphire substrates with a conventional low temperature GaN buffer layer to those with a sputtered-AlN buffer layer. The light output power and leakage current characteristics were signifi...

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Bibliographic Details
Main Authors: Seiji Ishimoto, Dong-Pyo Han, Kengo Yamamoto, Ryoya Mano, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya, Isamu Akasaki
Format: Article
Language:English
Published: MDPI AG 2019-02-01
Series:Applied Sciences
Subjects:
light-emitting diode
green gap
efficiency droop
piezoelectric field
tunneling leakage
internal quantum efficiency
Online Access:https://www.mdpi.com/2076-3417/9/4/788

Internet

https://www.mdpi.com/2076-3417/9/4/788

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