Enhanced Device Performance of GaInN-Based Green Light-Emitting Diode with Sputtered AlN Buffer Layer
In this study, we compared the device performance of GaInN-based green LEDs grown on <i>c</i>-plane sapphire substrates with a conventional low temperature GaN buffer layer to those with a sputtered-AlN buffer layer. The light output power and leakage current characteristics were signifi...
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| Format: | Article |
| Language: | English |
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MDPI AG
2019-02-01
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| Series: | Applied Sciences |
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| Online Access: | https://www.mdpi.com/2076-3417/9/4/788 |
| _version_ | 1819092384235913216 |
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| author | Seiji Ishimoto Dong-Pyo Han Kengo Yamamoto Ryoya Mano Satoshi Kamiyama Tetsuya Takeuchi Motoaki Iwaya Isamu Akasaki |
| author_facet | Seiji Ishimoto Dong-Pyo Han Kengo Yamamoto Ryoya Mano Satoshi Kamiyama Tetsuya Takeuchi Motoaki Iwaya Isamu Akasaki |
| author_sort | Seiji Ishimoto |
| collection | DOAJ |
| description | In this study, we compared the device performance of GaInN-based green LEDs grown on <i>c</i>-plane sapphire substrates with a conventional low temperature GaN buffer layer to those with a sputtered-AlN buffer layer. The light output power and leakage current characteristics were significantly improved by just replacing the buffer layer with a sputtered-AlN layer. To understand the origin of the improvement in performance, the electrical and optical properties were compared by means of electro-reflectance spectroscopy, I⁻V curves, electroluminescence spectra, L⁻I curves, and internal quantum efficiencies. From the analysis of the results, we concluded that the improvement is mainly due to the mitigation of strain and reduction of the piezoelectric field in the multiple quantum wells active region. |
| first_indexed | 2024-12-21T22:54:45Z |
| format | Article |
| id | doaj.art-746dc1d03f0a46a49b40a69ad58942b9 |
| institution | Directory Open Access Journal |
| issn | 2076-3417 |
| language | English |
| last_indexed | 2024-12-21T22:54:45Z |
| publishDate | 2019-02-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Applied Sciences |
| spelling | doaj.art-746dc1d03f0a46a49b40a69ad58942b92022-12-21T18:47:29ZengMDPI AGApplied Sciences2076-34172019-02-019478810.3390/app9040788app9040788Enhanced Device Performance of GaInN-Based Green Light-Emitting Diode with Sputtered AlN Buffer LayerSeiji Ishimoto0Dong-Pyo Han1Kengo Yamamoto2Ryoya Mano3Satoshi Kamiyama4Tetsuya Takeuchi5Motoaki Iwaya6Isamu Akasaki7Faculty of Science and Technology, Meijo University, Nagoya 468-8502, JapanFaculty of Science and Technology, Meijo University, Nagoya 468-8502, JapanFaculty of Science and Technology, Meijo University, Nagoya 468-8502, JapanFaculty of Science and Technology, Meijo University, Nagoya 468-8502, JapanFaculty of Science and Technology, Meijo University, Nagoya 468-8502, JapanFaculty of Science and Technology, Meijo University, Nagoya 468-8502, JapanFaculty of Science and Technology, Meijo University, Nagoya 468-8502, JapanFaculty of Science and Technology, Meijo University, Nagoya 468-8502, JapanIn this study, we compared the device performance of GaInN-based green LEDs grown on <i>c</i>-plane sapphire substrates with a conventional low temperature GaN buffer layer to those with a sputtered-AlN buffer layer. The light output power and leakage current characteristics were significantly improved by just replacing the buffer layer with a sputtered-AlN layer. To understand the origin of the improvement in performance, the electrical and optical properties were compared by means of electro-reflectance spectroscopy, I⁻V curves, electroluminescence spectra, L⁻I curves, and internal quantum efficiencies. From the analysis of the results, we concluded that the improvement is mainly due to the mitigation of strain and reduction of the piezoelectric field in the multiple quantum wells active region.https://www.mdpi.com/2076-3417/9/4/788light-emitting diodegreen gapefficiency drooppiezoelectric fieldtunneling leakageinternal quantum efficiency |
| spellingShingle | Seiji Ishimoto Dong-Pyo Han Kengo Yamamoto Ryoya Mano Satoshi Kamiyama Tetsuya Takeuchi Motoaki Iwaya Isamu Akasaki Enhanced Device Performance of GaInN-Based Green Light-Emitting Diode with Sputtered AlN Buffer Layer Applied Sciences light-emitting diode green gap efficiency droop piezoelectric field tunneling leakage internal quantum efficiency |
| title | Enhanced Device Performance of GaInN-Based Green Light-Emitting Diode with Sputtered AlN Buffer Layer |
| title_full | Enhanced Device Performance of GaInN-Based Green Light-Emitting Diode with Sputtered AlN Buffer Layer |
| title_fullStr | Enhanced Device Performance of GaInN-Based Green Light-Emitting Diode with Sputtered AlN Buffer Layer |
| title_full_unstemmed | Enhanced Device Performance of GaInN-Based Green Light-Emitting Diode with Sputtered AlN Buffer Layer |
| title_short | Enhanced Device Performance of GaInN-Based Green Light-Emitting Diode with Sputtered AlN Buffer Layer |
| title_sort | enhanced device performance of gainn based green light emitting diode with sputtered aln buffer layer |
| topic | light-emitting diode green gap efficiency droop piezoelectric field tunneling leakage internal quantum efficiency |
| url | https://www.mdpi.com/2076-3417/9/4/788 |
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