Modern scientific and practical approaches to the production of substrates from semiconductor compounds А3В5. Review
Modern electronic and optical engineering uses А3В5 single-crystal semiconductor materials (GaAs, GaSb, InAs, InSb, and InP) as substrates for epitaxial growth. These materials are obtained in the form of massive single-crystal ingots. Therefore, technologies for processing of these A3B5 wafers are...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Voronezh State University
2024-03-01
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| Series: | Конденсированные среды и межфазные границы |
| Subjects: | |
| Online Access: | https://journals.vsu.ru/kcmf/article/view/11805/11964 |