Analysis of the Bowing Phenomenon for Thin c-Si Solar Cells using Partially Processed c-Si Solar Cells
The silicon wafers for solar cells on which the paste is deposited experience a bowing phenomenon. The thickness of commonly used c-Si wafers is 180 μm or more. When fabricating c-Si solar cells with this wafer thickness, the bowing value is 3 mm or less and the problem does not occur. Howe...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2019-04-01
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| Series: | Energies |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1996-1073/12/9/1593 |