Strain-Induced Band Profile of Stacked InAs/GaAs Quantum Dots
The strain distribution and band profile in triply stacked InAs/GaAs quantum dots with dot spacing of 0.0 - 6.0 nm was calculated. The continuum elasticity theory for strain distribution and 8-band k.p theory for band structure was used. The use of the k.p method to calculate band structure with and...
| Main Author: | |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Walailak University
2013-12-01
|
| Series: | Walailak Journal of Science and Technology |
| Subjects: | |
| Online Access: | http://wjst.wu.ac.th/index.php/wjst/article/view/696 |