Rapid detection of capture and emission processes in surface and buffer traps: Understanding dynamic degradation in GaN power devices

Rapid detection of capture and emission processes in surface and buffer traps: Understanding dynamic degradation in GaN power devices

This study utilized a rapid detection technique, Isothermal Capture Transient Spectroscopy (ICTS), to identify and evaluate defects related to GaN device surface and buffer traps, and investigated the mechanisms by which they affect the dynamic performance of GaN based devices. Interface states and...

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Bibliographic Details
Main Authors: Yixu Yao, Sen Huang, Qimeng Jiang, Xinhua Wang, Yifei Huang, Yi Pei, Hongtu Qian, Hui Zhang, Fuqiang Guo, Bo Shen, Xinyu Liu
Format: Article
Language:English
Published: Elsevier 2024-08-01
Series:Power Electronic Devices and Components
Subjects:
GaN power devices
Reliability
Trap detection
Isothermal capture transient spectroscopy
Online Access:http://www.sciencedirect.com/science/article/pii/S2772370424000105

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http://www.sciencedirect.com/science/article/pii/S2772370424000105

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