Influence of Passivation Layers on Positive Gate Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors

Eitemau Tebyg

• Atmosphere Effect in Post-Annealing Treatments for Amorphous InGaZnO Thin-Film Transistors with SiO_x Passivation Layers
  gan: Wen Zhang, et al.
  Cyhoeddwyd: (2021-12-01)
• Improved Performance of InGaZnO Thin-Film Transistor With Ti Incorporation Into La₂O₃ Gate Dielectric
  gan: J. Q. Song, et al.
  Cyhoeddwyd: (2021-01-01)
• Amorphous InGaZnO Thin-Film Transistors with Double-Stacked Channel Layers for Ultraviolet Light Detection
  gan: Zenghui Fan, et al.
  Cyhoeddwyd: (2022-11-01)
• Current Boosting of Self‐Aligned Top‐Gate Amorphous InGaZnO Thin‐Film Transistors under Driving Conditions
  gan: Jingyu Park, et al.
  Cyhoeddwyd: (2023-03-01)
• Amorphous Oxide Thin Film Transistors with Nitrogen-Doped Hetero-Structure Channel Layers
  gan: Haiting Xie, et al.
  Cyhoeddwyd: (2017-10-01)