Activation Enhancement and Grain Size Improvement for Poly-Si Channel Vertical Transistor by Laser Thermal Annealing in 3D NAND Flash

Activation Enhancement and Grain Size Improvement for Poly-Si Channel Vertical Transistor by Laser Thermal Annealing in 3D NAND Flash

The bit density is generally increased by stacking more layers in 3D NAND Flash. Lowering dopant activation of select transistors results from complex integrated processes. To improve channel dopant activation, the test structure of vertical channel transistors was used to investigate the influence...

Full description

Bibliographic Details
Main Authors: Tao Yang, Zhiliang Xia, Dongyu Fan, Dongxue Zhao, Wei Xie, Yuancheng Yang, Lei Liu, Wenxi Zhou, Zongliang Huo
Format: Article
Language:English
Published: MDPI AG 2023-01-01
Series:Micromachines
Subjects:
3D NAND Flash
vertical channel transistor
laser thermal annealing
dopant activation
Poly-Si
grain size
Online Access:https://www.mdpi.com/2072-666X/14/1/230

Internet

https://www.mdpi.com/2072-666X/14/1/230

Similar Items