Interwell coupling effect in Si/SiGe quantum wells grown by ultra high vacuum chemical vapor deposition

Interwell coupling effect in Si/SiGe quantum wells grown by ultra high vacuum chemical vapor deposition

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<p>Abstract</p><p>Si/Si<sub>0.66</sub>Ge<sub>0.34</sub>coupled quantum well (CQW) structures with different barrier thickness of 40, 4 and 2 nm were grown on Si substrates using an ultra high vacuum chemical vapor deposition (UHV-CVD) system. The samples wer...

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Bibliographic Details
Main Authors: Loh Ter-Hoe, Nguyen Hoai Son, Narayanan Balasubramanian, Wang Rui, Yoon Soon Fatt, Lu Fen, Fan Wei Jun, Liu Chong Yang
Format: Article
Language:English
Published: SpringerOpen 2007-01-01
Series:Nanoscale Research Letters
Subjects:
Si/SiGe
Coupled quantum well
UHV-CVD
Online Access:http://dx.doi.org/10.1007/s11671-007-9046-8

Internet

http://dx.doi.org/10.1007/s11671-007-9046-8

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