Temperature‐Dependent Phase Transition in WS2 for Reinforcing Band‐to‐Band Tunneling and Photoreactive Random Access Memory Application

Temperature‐Dependent Phase Transition in WS2 for Reinforcing Band‐to‐Band Tunneling and Photoreactive Random Access Memory Application

In the era of big data, negative differential resistance (NDR) devices have attracted significant attention as a means of handling massive amounts of information. While 2D materials have been used to achieve NDR behavior, their intrinsic material characteristics have produced limited performance imp...

Full description

Bibliographic Details
Main Authors: Gunhoo Woo, Jinill Cho, Heejung Yeom, Min Young Yoon, Geon Woong Eom, Muyoung Kim, Jihun Mun, Hyo Chang Lee, Hyeong-U Kim, Hocheon Yoo, Taesung Kim
Format: Article
Language:English
Published: Wiley-VCH 2024-02-01
Series:Small Science
Subjects:
negative differential resistances
optoelectrical devices
phase modulations
plasma-enhanced chemical vapor depositions
random-access memories
Online Access:https://doi.org/10.1002/smsc.202300202

Internet

https://doi.org/10.1002/smsc.202300202

Similar Items