Temperature‐Dependent Phase Transition in WS2 for Reinforcing Band‐to‐Band Tunneling and Photoreactive Random Access Memory Application
In the era of big data, negative differential resistance (NDR) devices have attracted significant attention as a means of handling massive amounts of information. While 2D materials have been used to achieve NDR behavior, their intrinsic material characteristics have produced limited performance imp...
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2024-02-01
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| Series: | Small Science |
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| Online Access: | https://doi.org/10.1002/smsc.202300202 |
| _version_ | 1827349773884063744 |
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| author | Gunhoo Woo Jinill Cho Heejung Yeom Min Young Yoon Geon Woong Eom Muyoung Kim Jihun Mun Hyo Chang Lee Hyeong-U Kim Hocheon Yoo Taesung Kim |
| author_facet | Gunhoo Woo Jinill Cho Heejung Yeom Min Young Yoon Geon Woong Eom Muyoung Kim Jihun Mun Hyo Chang Lee Hyeong-U Kim Hocheon Yoo Taesung Kim |
| author_sort | Gunhoo Woo |
| collection | DOAJ |
| description | In the era of big data, negative differential resistance (NDR) devices have attracted significant attention as a means of handling massive amounts of information. While 2D materials have been used to achieve NDR behavior, their intrinsic material characteristics have produced limited performance improvements. In this article, a facile phase modification method is presented via a plasma‐assisted sulfidation process to synthesize multiphased WS2 thin films, including distorted 1 T (D‐1 T) phase and 2 H phases for photoreactive NDR devices with p‐Si. The D‐1 T phase offers a feasible route to achieve high‐performance NDR devices with excellent stability and semimetallic properties. A comprehensive investigation of experimental and computational analyses elucidates the phase transition mechanism with various temperatures and electrical properties of D‐1 T WS2. In addition, optimizing electron tunneling in the multiple‐phased tungsten disulfide (MP‐WS2)/p‐Si heterojunction at MP‐WS2 with 77.4% D‐1 T phase results in superior NDR performance with a peak‐to‐valley current ratio of 13.8 and reliable photoreactive random‐access memory. This unique phase engineering process via plasma‐assisted sulfidation provides a pioneering perspective in functionalization and reliability for next‐generation nanoelectronics. |
| first_indexed | 2024-03-08T00:47:08Z |
| format | Article |
| id | doaj.art-7525d3017bdf4b7b99c35b3e0a53856d |
| institution | Directory Open Access Journal |
| issn | 2688-4046 |
| language | English |
| last_indexed | 2024-03-08T00:47:08Z |
| publishDate | 2024-02-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Small Science |
| spelling | doaj.art-7525d3017bdf4b7b99c35b3e0a53856d2024-02-15T05:52:51ZengWiley-VCHSmall Science2688-40462024-02-0142n/an/a10.1002/smsc.202300202Temperature‐Dependent Phase Transition in WS2 for Reinforcing Band‐to‐Band Tunneling and Photoreactive Random Access Memory ApplicationGunhoo Woo0Jinill Cho1Heejung Yeom2Min Young Yoon3Geon Woong Eom4Muyoung Kim5Jihun Mun6Hyo Chang Lee7Hyeong-U Kim8Hocheon Yoo9Taesung Kim10SKKU Advanced Institute of Nanotechnology (SAINT) Sungkyunkwan University (SKKU) Suwon 16419 Republic of KoreaDepartment of Mechanical Engineering Sungkyunkwan University (SKKU) Suwon 16419 Republic of KoreaAdvanced Instrumentation Institute Korea Research Institute of Standards and Science (KRISS) Daejeon 34113 Republic of KoreaAdvanced Instrumentation Institute Korea Research Institute of Standards and Science (KRISS) Daejeon 34113 Republic of KoreaDepartment of Physics Chungnam National University (CNU) Daejeon 35018 Republic of KoreaDepartment of Plasma Engineering Korea Institute of Machinery and Materials (KIMM) Daejeon 34103 Republic of KoreaAdvanced Instrumentation Institute Korea Research Institute of Standards and Science (KRISS) Daejeon 34113 Republic of KoreaDepartment of Semiconductor Science Engineering and Technology Korea Aerospace University Goyang 10540 Republic of KoreaDepartment of Plasma Engineering Korea Institute of Machinery and Materials (KIMM) Daejeon 34103 Republic of KoreaDepartment of Electronic Engineering Gachon University 1342 Seongnam-daero Seongnam 13120 Republic of KoreaSKKU Advanced Institute of Nanotechnology (SAINT) Sungkyunkwan University (SKKU) Suwon 16419 Republic of KoreaIn the era of big data, negative differential resistance (NDR) devices have attracted significant attention as a means of handling massive amounts of information. While 2D materials have been used to achieve NDR behavior, their intrinsic material characteristics have produced limited performance improvements. In this article, a facile phase modification method is presented via a plasma‐assisted sulfidation process to synthesize multiphased WS2 thin films, including distorted 1 T (D‐1 T) phase and 2 H phases for photoreactive NDR devices with p‐Si. The D‐1 T phase offers a feasible route to achieve high‐performance NDR devices with excellent stability and semimetallic properties. A comprehensive investigation of experimental and computational analyses elucidates the phase transition mechanism with various temperatures and electrical properties of D‐1 T WS2. In addition, optimizing electron tunneling in the multiple‐phased tungsten disulfide (MP‐WS2)/p‐Si heterojunction at MP‐WS2 with 77.4% D‐1 T phase results in superior NDR performance with a peak‐to‐valley current ratio of 13.8 and reliable photoreactive random‐access memory. This unique phase engineering process via plasma‐assisted sulfidation provides a pioneering perspective in functionalization and reliability for next‐generation nanoelectronics.https://doi.org/10.1002/smsc.202300202negative differential resistancesoptoelectrical devicesphase modulationsplasma-enhanced chemical vapor depositionsrandom-access memories |
| spellingShingle | Gunhoo Woo Jinill Cho Heejung Yeom Min Young Yoon Geon Woong Eom Muyoung Kim Jihun Mun Hyo Chang Lee Hyeong-U Kim Hocheon Yoo Taesung Kim Temperature‐Dependent Phase Transition in WS2 for Reinforcing Band‐to‐Band Tunneling and Photoreactive Random Access Memory Application Small Science negative differential resistances optoelectrical devices phase modulations plasma-enhanced chemical vapor depositions random-access memories |
| title | Temperature‐Dependent Phase Transition in WS2 for Reinforcing Band‐to‐Band Tunneling and Photoreactive Random Access Memory Application |
| title_full | Temperature‐Dependent Phase Transition in WS2 for Reinforcing Band‐to‐Band Tunneling and Photoreactive Random Access Memory Application |
| title_fullStr | Temperature‐Dependent Phase Transition in WS2 for Reinforcing Band‐to‐Band Tunneling and Photoreactive Random Access Memory Application |
| title_full_unstemmed | Temperature‐Dependent Phase Transition in WS2 for Reinforcing Band‐to‐Band Tunneling and Photoreactive Random Access Memory Application |
| title_short | Temperature‐Dependent Phase Transition in WS2 for Reinforcing Band‐to‐Band Tunneling and Photoreactive Random Access Memory Application |
| title_sort | temperature dependent phase transition in ws2 for reinforcing band to band tunneling and photoreactive random access memory application |
| topic | negative differential resistances optoelectrical devices phase modulations plasma-enhanced chemical vapor depositions random-access memories |
| url | https://doi.org/10.1002/smsc.202300202 |
| work_keys_str_mv | AT gunhoowoo temperaturedependentphasetransitioninws2forreinforcingbandtobandtunnelingandphotoreactiverandomaccessmemoryapplication AT jinillcho temperaturedependentphasetransitioninws2forreinforcingbandtobandtunnelingandphotoreactiverandomaccessmemoryapplication AT heejungyeom temperaturedependentphasetransitioninws2forreinforcingbandtobandtunnelingandphotoreactiverandomaccessmemoryapplication AT minyoungyoon temperaturedependentphasetransitioninws2forreinforcingbandtobandtunnelingandphotoreactiverandomaccessmemoryapplication AT geonwoongeom temperaturedependentphasetransitioninws2forreinforcingbandtobandtunnelingandphotoreactiverandomaccessmemoryapplication AT muyoungkim temperaturedependentphasetransitioninws2forreinforcingbandtobandtunnelingandphotoreactiverandomaccessmemoryapplication AT jihunmun temperaturedependentphasetransitioninws2forreinforcingbandtobandtunnelingandphotoreactiverandomaccessmemoryapplication AT hyochanglee temperaturedependentphasetransitioninws2forreinforcingbandtobandtunnelingandphotoreactiverandomaccessmemoryapplication AT hyeongukim temperaturedependentphasetransitioninws2forreinforcingbandtobandtunnelingandphotoreactiverandomaccessmemoryapplication AT hocheonyoo temperaturedependentphasetransitioninws2forreinforcingbandtobandtunnelingandphotoreactiverandomaccessmemoryapplication AT taesungkim temperaturedependentphasetransitioninws2forreinforcingbandtobandtunnelingandphotoreactiverandomaccessmemoryapplication |