Effect of epitaxial layer thickness on the electrical properties of Ti/n-AlGaAs grown by MBE
The effect of epitaxial layer thickness on electrical characteristics of two Ti/n-Al0.33Ga0.67As Schottky barrier diodes was studied in the temperature range of 300–420 K. Comparing the current–voltage (I–V) characteristics of two samples with epitaxial layer thicknesses of 2 μm and 1.5 μm discloses...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2016-01-01
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| Series: | Results in Physics |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2211379715000856 |