Effect of epitaxial layer thickness on the electrical properties of Ti/n-AlGaAs grown by MBE
The effect of epitaxial layer thickness on electrical characteristics of two Ti/n-Al0.33Ga0.67As Schottky barrier diodes was studied in the temperature range of 300–420 K. Comparing the current–voltage (I–V) characteristics of two samples with epitaxial layer thicknesses of 2 μm and 1.5 μm discloses...
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| Format: | Article |
| Language: | English |
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Elsevier
2016-01-01
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| Series: | Results in Physics |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2211379715000856 |
| _version_ | 1819096420452401152 |
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| author | N.A. Al-Ahmadi H.A. Al-Jawhari |
| author_facet | N.A. Al-Ahmadi H.A. Al-Jawhari |
| author_sort | N.A. Al-Ahmadi |
| collection | DOAJ |
| description | The effect of epitaxial layer thickness on electrical characteristics of two Ti/n-Al0.33Ga0.67As Schottky barrier diodes was studied in the temperature range of 300–420 K. Comparing the current–voltage (I–V) characteristics of two samples with epitaxial layer thicknesses of 2 μm and 1.5 μm discloses that the device with a thinner epitaxial layer has a higher barrier height and hence a lower reverse current. Specifically, we found that increasing the Al0.33Ga0.67As thickness from 1.5 μm to 2 μm would lower the value of the barrier height by ∼12% at 300 K. We associated such retrogression of the electrical quality to the presence of deep level traps in the Si:AlxGa1−xAs layer. For both samples we found that the effective barrier height decreases with increasing the annealing temperature. Yet, the sample with a thinner layer showed more stability and less temperature dependence. Keywords: Schottky barrier height, Si:AlxGa1−xAs, Epitaxial layer thickness |
| first_indexed | 2024-12-21T23:58:55Z |
| format | Article |
| id | doaj.art-754e1fa127f4406da8166b98df64b587 |
| institution | Directory Open Access Journal |
| issn | 2211-3797 |
| language | English |
| last_indexed | 2024-12-21T23:58:55Z |
| publishDate | 2016-01-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Results in Physics |
| spelling | doaj.art-754e1fa127f4406da8166b98df64b5872022-12-21T18:45:44ZengElsevierResults in Physics2211-37972016-01-0166769Effect of epitaxial layer thickness on the electrical properties of Ti/n-AlGaAs grown by MBEN.A. Al-Ahmadi0H.A. Al-Jawhari1Corresponding author.; Department of Physics, King Abdulaziz University, Jeddah 21589, Saudi ArabiaDepartment of Physics, King Abdulaziz University, Jeddah 21589, Saudi ArabiaThe effect of epitaxial layer thickness on electrical characteristics of two Ti/n-Al0.33Ga0.67As Schottky barrier diodes was studied in the temperature range of 300–420 K. Comparing the current–voltage (I–V) characteristics of two samples with epitaxial layer thicknesses of 2 μm and 1.5 μm discloses that the device with a thinner epitaxial layer has a higher barrier height and hence a lower reverse current. Specifically, we found that increasing the Al0.33Ga0.67As thickness from 1.5 μm to 2 μm would lower the value of the barrier height by ∼12% at 300 K. We associated such retrogression of the electrical quality to the presence of deep level traps in the Si:AlxGa1−xAs layer. For both samples we found that the effective barrier height decreases with increasing the annealing temperature. Yet, the sample with a thinner layer showed more stability and less temperature dependence. Keywords: Schottky barrier height, Si:AlxGa1−xAs, Epitaxial layer thicknesshttp://www.sciencedirect.com/science/article/pii/S2211379715000856 |
| spellingShingle | N.A. Al-Ahmadi H.A. Al-Jawhari Effect of epitaxial layer thickness on the electrical properties of Ti/n-AlGaAs grown by MBE Results in Physics |
| title | Effect of epitaxial layer thickness on the electrical properties of Ti/n-AlGaAs grown by MBE |
| title_full | Effect of epitaxial layer thickness on the electrical properties of Ti/n-AlGaAs grown by MBE |
| title_fullStr | Effect of epitaxial layer thickness on the electrical properties of Ti/n-AlGaAs grown by MBE |
| title_full_unstemmed | Effect of epitaxial layer thickness on the electrical properties of Ti/n-AlGaAs grown by MBE |
| title_short | Effect of epitaxial layer thickness on the electrical properties of Ti/n-AlGaAs grown by MBE |
| title_sort | effect of epitaxial layer thickness on the electrical properties of ti n algaas grown by mbe |
| url | http://www.sciencedirect.com/science/article/pii/S2211379715000856 |
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