Field-Effect Transistor Based on 2D Microcrystalline MoS<sub>2</sub> Film Grown by Sulfurization of Atomically Layer Deposited MoO<sub>3</sub>

Field-Effect Transistor Based on 2D Microcrystalline MoS<sub>2</sub> Film Grown by Sulfurization of Atomically Layer Deposited MoO<sub>3</sub>

Atomically thin molybdenum disulfide (MoS<sub>2</sub>) is a promising channel material for next-generation thin-body field-effect transistors (FETs), which makes the development of methods allowing for its controllable synthesis over a large area an essential task. Currently, one of the...

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Bibliographic Details
Main Authors: Ivan V. Zabrosaev, Maxim G. Kozodaev, Roman I. Romanov, Anna G. Chernikova, Prabhash Mishra, Natalia V. Doroshina, Aleksey V. Arsenin, Valentyn S. Volkov, Alexandra A. Koroleva, Andrey M. Markeev
Format: Article
Language:English
Published: MDPI AG 2022-09-01
Series:Nanomaterials
Subjects:
TMDC
ALD
sulfurization
microcrystalline film
Raman spectroscopy
field effect transistor
Online Access:https://www.mdpi.com/2079-4991/12/19/3262

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https://www.mdpi.com/2079-4991/12/19/3262

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