Field-Effect Transistor Based on 2D Microcrystalline MoS<sub>2</sub> Film Grown by Sulfurization of Atomically Layer Deposited MoO<sub>3</sub>
Atomically thin molybdenum disulfide (MoS<sub>2</sub>) is a promising channel material for next-generation thin-body field-effect transistors (FETs), which makes the development of methods allowing for its controllable synthesis over a large area an essential task. Currently, one of the...
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MDPI AG
2022-09-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/12/19/3262 |
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| author | Ivan V. Zabrosaev Maxim G. Kozodaev Roman I. Romanov Anna G. Chernikova Prabhash Mishra Natalia V. Doroshina Aleksey V. Arsenin Valentyn S. Volkov Alexandra A. Koroleva Andrey M. Markeev |
| author_facet | Ivan V. Zabrosaev Maxim G. Kozodaev Roman I. Romanov Anna G. Chernikova Prabhash Mishra Natalia V. Doroshina Aleksey V. Arsenin Valentyn S. Volkov Alexandra A. Koroleva Andrey M. Markeev |
| author_sort | Ivan V. Zabrosaev |
| collection | DOAJ |
| description | Atomically thin molybdenum disulfide (MoS<sub>2</sub>) is a promising channel material for next-generation thin-body field-effect transistors (FETs), which makes the development of methods allowing for its controllable synthesis over a large area an essential task. Currently, one of the cost-effective ways of its synthesis is the sulfurization of preliminary grown oxide- or metallic film. However, despite apparent progress in this field, the electronic quality of the obtained MoS<sub>2</sub> is inferior to that of exfoliated samples, making the detailed investigation of the sulfurized films’ properties of great interest. In this work, we synthesized continuous MoS<sub>2</sub> films with a thickness of ≈2.2 nm via the sulfurization of an atomic-layer-deposited MoO<sub>3</sub> layer. X-ray photoelectron spectroscopy, transmission electron microscopy, and Raman spectroscopy indicated the appropriate chemical composition and microcrystalline structure of the obtained MoS<sub>2</sub> films. The semiconductor quality of the synthesized films was confirmed by the fabrication of a field-effect transistor (FET) with an I<sub>on</sub>/I<sub>off</sub> ratio of ≈40, which was limited primarily by the high contact resistance. The Schottky barrier height at the Au/MoS<sub>2</sub> interface was found to be ≈1.2 eV indicating the necessity of careful contact engineering. Due to its simplicity and cost-effectiveness, such a technique of MoS<sub>2</sub> synthesis still appears to be highly attractive for its applications in next-generation microelectronics. Therefore, further research of the electronic properties of films obtained via this technique is required. |
| first_indexed | 2024-03-09T21:22:47Z |
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| id | doaj.art-7557110636414efd9d3a9810dfffb0af |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-09T21:22:47Z |
| publishDate | 2022-09-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-7557110636414efd9d3a9810dfffb0af2023-11-23T21:17:10ZengMDPI AGNanomaterials2079-49912022-09-011219326210.3390/nano12193262Field-Effect Transistor Based on 2D Microcrystalline MoS<sub>2</sub> Film Grown by Sulfurization of Atomically Layer Deposited MoO<sub>3</sub>Ivan V. Zabrosaev0Maxim G. Kozodaev1Roman I. Romanov2Anna G. Chernikova3Prabhash Mishra4Natalia V. Doroshina5Aleksey V. Arsenin6Valentyn S. Volkov7Alexandra A. Koroleva8Andrey M. Markeev9Moscow Institute of Physics and Technology, National Research University, Institutskii per. 9, 141701 Dolgoprudny, RussiaMoscow Institute of Physics and Technology, National Research University, Institutskii per. 9, 141701 Dolgoprudny, RussiaMoscow Institute of Physics and Technology, National Research University, Institutskii per. 9, 141701 Dolgoprudny, RussiaMoscow Institute of Physics and Technology, National Research University, Institutskii per. 9, 141701 Dolgoprudny, RussiaCenter for Photonics & 2D Materials, Moscow Institute of Physics and Technology, National Research University, 141700 Dolgoprudny, RussiaCenter for Photonics & 2D Materials, Moscow Institute of Physics and Technology, National Research University, 141700 Dolgoprudny, RussiaCenter for Photonics & 2D Materials, Moscow Institute of Physics and Technology, National Research University, 141700 Dolgoprudny, RussiaCenter for Photonics & 2D Materials, Moscow Institute of Physics and Technology, National Research University, 141700 Dolgoprudny, RussiaMoscow Institute of Physics and Technology, National Research University, Institutskii per. 9, 141701 Dolgoprudny, RussiaMoscow Institute of Physics and Technology, National Research University, Institutskii per. 9, 141701 Dolgoprudny, RussiaAtomically thin molybdenum disulfide (MoS<sub>2</sub>) is a promising channel material for next-generation thin-body field-effect transistors (FETs), which makes the development of methods allowing for its controllable synthesis over a large area an essential task. Currently, one of the cost-effective ways of its synthesis is the sulfurization of preliminary grown oxide- or metallic film. However, despite apparent progress in this field, the electronic quality of the obtained MoS<sub>2</sub> is inferior to that of exfoliated samples, making the detailed investigation of the sulfurized films’ properties of great interest. In this work, we synthesized continuous MoS<sub>2</sub> films with a thickness of ≈2.2 nm via the sulfurization of an atomic-layer-deposited MoO<sub>3</sub> layer. X-ray photoelectron spectroscopy, transmission electron microscopy, and Raman spectroscopy indicated the appropriate chemical composition and microcrystalline structure of the obtained MoS<sub>2</sub> films. The semiconductor quality of the synthesized films was confirmed by the fabrication of a field-effect transistor (FET) with an I<sub>on</sub>/I<sub>off</sub> ratio of ≈40, which was limited primarily by the high contact resistance. The Schottky barrier height at the Au/MoS<sub>2</sub> interface was found to be ≈1.2 eV indicating the necessity of careful contact engineering. Due to its simplicity and cost-effectiveness, such a technique of MoS<sub>2</sub> synthesis still appears to be highly attractive for its applications in next-generation microelectronics. Therefore, further research of the electronic properties of films obtained via this technique is required.https://www.mdpi.com/2079-4991/12/19/3262TMDCALDsulfurizationmicrocrystalline filmRaman spectroscopyfield effect transistor |
| spellingShingle | Ivan V. Zabrosaev Maxim G. Kozodaev Roman I. Romanov Anna G. Chernikova Prabhash Mishra Natalia V. Doroshina Aleksey V. Arsenin Valentyn S. Volkov Alexandra A. Koroleva Andrey M. Markeev Field-Effect Transistor Based on 2D Microcrystalline MoS<sub>2</sub> Film Grown by Sulfurization of Atomically Layer Deposited MoO<sub>3</sub> Nanomaterials TMDC ALD sulfurization microcrystalline film Raman spectroscopy field effect transistor |
| title | Field-Effect Transistor Based on 2D Microcrystalline MoS<sub>2</sub> Film Grown by Sulfurization of Atomically Layer Deposited MoO<sub>3</sub> |
| title_full | Field-Effect Transistor Based on 2D Microcrystalline MoS<sub>2</sub> Film Grown by Sulfurization of Atomically Layer Deposited MoO<sub>3</sub> |
| title_fullStr | Field-Effect Transistor Based on 2D Microcrystalline MoS<sub>2</sub> Film Grown by Sulfurization of Atomically Layer Deposited MoO<sub>3</sub> |
| title_full_unstemmed | Field-Effect Transistor Based on 2D Microcrystalline MoS<sub>2</sub> Film Grown by Sulfurization of Atomically Layer Deposited MoO<sub>3</sub> |
| title_short | Field-Effect Transistor Based on 2D Microcrystalline MoS<sub>2</sub> Film Grown by Sulfurization of Atomically Layer Deposited MoO<sub>3</sub> |
| title_sort | field effect transistor based on 2d microcrystalline mos sub 2 sub film grown by sulfurization of atomically layer deposited moo sub 3 sub |
| topic | TMDC ALD sulfurization microcrystalline film Raman spectroscopy field effect transistor |
| url | https://www.mdpi.com/2079-4991/12/19/3262 |
| work_keys_str_mv | AT ivanvzabrosaev fieldeffecttransistorbasedon2dmicrocrystallinemossub2subfilmgrownbysulfurizationofatomicallylayerdepositedmoosub3sub AT maximgkozodaev fieldeffecttransistorbasedon2dmicrocrystallinemossub2subfilmgrownbysulfurizationofatomicallylayerdepositedmoosub3sub AT romaniromanov fieldeffecttransistorbasedon2dmicrocrystallinemossub2subfilmgrownbysulfurizationofatomicallylayerdepositedmoosub3sub AT annagchernikova fieldeffecttransistorbasedon2dmicrocrystallinemossub2subfilmgrownbysulfurizationofatomicallylayerdepositedmoosub3sub AT prabhashmishra fieldeffecttransistorbasedon2dmicrocrystallinemossub2subfilmgrownbysulfurizationofatomicallylayerdepositedmoosub3sub AT nataliavdoroshina fieldeffecttransistorbasedon2dmicrocrystallinemossub2subfilmgrownbysulfurizationofatomicallylayerdepositedmoosub3sub AT alekseyvarsenin fieldeffecttransistorbasedon2dmicrocrystallinemossub2subfilmgrownbysulfurizationofatomicallylayerdepositedmoosub3sub AT valentynsvolkov fieldeffecttransistorbasedon2dmicrocrystallinemossub2subfilmgrownbysulfurizationofatomicallylayerdepositedmoosub3sub AT alexandraakoroleva fieldeffecttransistorbasedon2dmicrocrystallinemossub2subfilmgrownbysulfurizationofatomicallylayerdepositedmoosub3sub AT andreymmarkeev fieldeffecttransistorbasedon2dmicrocrystallinemossub2subfilmgrownbysulfurizationofatomicallylayerdepositedmoosub3sub |