Structural Characterization of ZnTe Grown by Atomic-Layer-Deposition Regime on GaAs and GaSb (100) Oriented Substrates

Structural Characterization of ZnTe Grown by Atomic-Layer-Deposition Regime on GaAs and GaSb (100) Oriented Substrates

This work presents the characterization of ZnTe nanolayers grown on GaAs and GaSb (100) substrates by the Atomic Layer Deposition (ALD) regime. Under certain conditions, the alternating exposition of a substrate surface to the element vapours makes possible the growth of atomic layers in a reactor w...

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Bibliographic Details
Main Authors: Roberto Saúl Castillo-Ojeda, Joel Díaz-Reyes, Miguel Galván-Arellano, Francisco de Anda-Salazar, Jorge Indalecio Contreras-Rascon, María de la Cruz Peralta-Clara, Julieta Salomé Veloz-Rendón
Format: Article
Language:English
Published: Associação Brasileira de Metalurgia e Materiais (ABM); Associação Brasileira de Cerâmica (ABC); Associação Brasileira de Polímeros (ABPol) 2017-03-01
Series:Materials Research
Subjects:
Atomic Layer Deposition
nanolayers
X-ray diffraction
Raman scattering
Online Access:http://www.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392017000501179&tlng=en

Internet

http://www.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392017000501179&tlng=en

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