Large zero bias peaks and dips in a four-terminal thin InAs-Al nanowire device

Large zero bias peaks and dips in a four-terminal thin InAs-Al nanowire device

We report electron transport studies of a thin InAs-Al hybrid semiconductor-superconductor nanowire device using a four-terminal design. Compared to previous studies, thinner InAs nanowire (diameter less than 40 nm) is expected to reach fewer subband regime. The four-terminal device design excludes...

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Bibliographic Details
Main Authors: Huading Song, Zitong Zhang, Dong Pan, Donghao Liu, Zhaoyu Wang, Zhan Cao, Lei Liu, Lianjun Wen, Dunyuan Liao, Ran Zhuo, Dong E. Liu, Runan Shang, Jianhua Zhao, Hao Zhang
Format: Article
Language:English
Published: American Physical Society 2022-09-01
Series:Physical Review Research
Online Access:http://doi.org/10.1103/PhysRevResearch.4.033235

Internet

http://doi.org/10.1103/PhysRevResearch.4.033235

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