Large zero bias peaks and dips in a four-terminal thin InAs-Al nanowire device
We report electron transport studies of a thin InAs-Al hybrid semiconductor-superconductor nanowire device using a four-terminal design. Compared to previous studies, thinner InAs nanowire (diameter less than 40 nm) is expected to reach fewer subband regime. The four-terminal device design excludes...
| Main Authors: | , , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
American Physical Society
2022-09-01
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| Series: | Physical Review Research |
| Online Access: | http://doi.org/10.1103/PhysRevResearch.4.033235 |
| _version_ | 1797210653702750208 |
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| author | Huading Song Zitong Zhang Dong Pan Donghao Liu Zhaoyu Wang Zhan Cao Lei Liu Lianjun Wen Dunyuan Liao Ran Zhuo Dong E. Liu Runan Shang Jianhua Zhao Hao Zhang |
| author_facet | Huading Song Zitong Zhang Dong Pan Donghao Liu Zhaoyu Wang Zhan Cao Lei Liu Lianjun Wen Dunyuan Liao Ran Zhuo Dong E. Liu Runan Shang Jianhua Zhao Hao Zhang |
| author_sort | Huading Song |
| collection | DOAJ |
| description | We report electron transport studies of a thin InAs-Al hybrid semiconductor-superconductor nanowire device using a four-terminal design. Compared to previous studies, thinner InAs nanowire (diameter less than 40 nm) is expected to reach fewer subband regime. The four-terminal device design excludes electrode contact resistance, an unknown value, which has inevitably affected previously reported device conductance. Using tunneling spectroscopy, we find large zero bias peaks (ZBPs) in differential conductance on the order of 2e^{2}/h. At specific gate voltage settings, we find a magnetic-field-driven transition between a zero bias peak and a zero bias dip while the zero-bias conductance sticks close to 2e^{2}/h. We discuss a topologically trivial interpretation involving disorder, smooth potential variation and quasi-Majorana zero modes. |
| first_indexed | 2024-04-24T10:14:01Z |
| format | Article |
| id | doaj.art-7573eb406908457c81d41b7a052ede0b |
| institution | Directory Open Access Journal |
| issn | 2643-1564 |
| language | English |
| last_indexed | 2024-04-24T10:14:01Z |
| publishDate | 2022-09-01 |
| publisher | American Physical Society |
| record_format | Article |
| series | Physical Review Research |
| spelling | doaj.art-7573eb406908457c81d41b7a052ede0b2024-04-12T17:24:43ZengAmerican Physical SocietyPhysical Review Research2643-15642022-09-014303323510.1103/PhysRevResearch.4.033235Large zero bias peaks and dips in a four-terminal thin InAs-Al nanowire deviceHuading SongZitong ZhangDong PanDonghao LiuZhaoyu WangZhan CaoLei LiuLianjun WenDunyuan LiaoRan ZhuoDong E. LiuRunan ShangJianhua ZhaoHao ZhangWe report electron transport studies of a thin InAs-Al hybrid semiconductor-superconductor nanowire device using a four-terminal design. Compared to previous studies, thinner InAs nanowire (diameter less than 40 nm) is expected to reach fewer subband regime. The four-terminal device design excludes electrode contact resistance, an unknown value, which has inevitably affected previously reported device conductance. Using tunneling spectroscopy, we find large zero bias peaks (ZBPs) in differential conductance on the order of 2e^{2}/h. At specific gate voltage settings, we find a magnetic-field-driven transition between a zero bias peak and a zero bias dip while the zero-bias conductance sticks close to 2e^{2}/h. We discuss a topologically trivial interpretation involving disorder, smooth potential variation and quasi-Majorana zero modes.http://doi.org/10.1103/PhysRevResearch.4.033235 |
| spellingShingle | Huading Song Zitong Zhang Dong Pan Donghao Liu Zhaoyu Wang Zhan Cao Lei Liu Lianjun Wen Dunyuan Liao Ran Zhuo Dong E. Liu Runan Shang Jianhua Zhao Hao Zhang Large zero bias peaks and dips in a four-terminal thin InAs-Al nanowire device Physical Review Research |
| title | Large zero bias peaks and dips in a four-terminal thin InAs-Al nanowire device |
| title_full | Large zero bias peaks and dips in a four-terminal thin InAs-Al nanowire device |
| title_fullStr | Large zero bias peaks and dips in a four-terminal thin InAs-Al nanowire device |
| title_full_unstemmed | Large zero bias peaks and dips in a four-terminal thin InAs-Al nanowire device |
| title_short | Large zero bias peaks and dips in a four-terminal thin InAs-Al nanowire device |
| title_sort | large zero bias peaks and dips in a four terminal thin inas al nanowire device |
| url | http://doi.org/10.1103/PhysRevResearch.4.033235 |
| work_keys_str_mv | AT huadingsong largezerobiaspeaksanddipsinafourterminalthininasalnanowiredevice AT zitongzhang largezerobiaspeaksanddipsinafourterminalthininasalnanowiredevice AT dongpan largezerobiaspeaksanddipsinafourterminalthininasalnanowiredevice AT donghaoliu largezerobiaspeaksanddipsinafourterminalthininasalnanowiredevice AT zhaoyuwang largezerobiaspeaksanddipsinafourterminalthininasalnanowiredevice AT zhancao largezerobiaspeaksanddipsinafourterminalthininasalnanowiredevice AT leiliu largezerobiaspeaksanddipsinafourterminalthininasalnanowiredevice AT lianjunwen largezerobiaspeaksanddipsinafourterminalthininasalnanowiredevice AT dunyuanliao largezerobiaspeaksanddipsinafourterminalthininasalnanowiredevice AT ranzhuo largezerobiaspeaksanddipsinafourterminalthininasalnanowiredevice AT dongeliu largezerobiaspeaksanddipsinafourterminalthininasalnanowiredevice AT runanshang largezerobiaspeaksanddipsinafourterminalthininasalnanowiredevice AT jianhuazhao largezerobiaspeaksanddipsinafourterminalthininasalnanowiredevice AT haozhang largezerobiaspeaksanddipsinafourterminalthininasalnanowiredevice |