Large zero bias peaks and dips in a four-terminal thin InAs-Al nanowire device
We report electron transport studies of a thin InAs-Al hybrid semiconductor-superconductor nanowire device using a four-terminal design. Compared to previous studies, thinner InAs nanowire (diameter less than 40 nm) is expected to reach fewer subband regime. The four-terminal device design excludes...
Main Authors: | Huading Song, Zitong Zhang, Dong Pan, Donghao Liu, Zhaoyu Wang, Zhan Cao, Lei Liu, Lianjun Wen, Dunyuan Liao, Ran Zhuo, Dong E. Liu, Runan Shang, Jianhua Zhao, Hao Zhang |
---|---|
Format: | Article |
Language: | English |
Published: |
American Physical Society
2022-09-01
|
Series: | Physical Review Research |
Online Access: | http://doi.org/10.1103/PhysRevResearch.4.033235 |
Similar Items
-
Physical mechanisms for zero-bias conductance peaks in Majorana nanowires
by: Haining Pan, et al.
Published: (2020-03-01) -
Nature of heterointerfaces in GaAs/InAs and InAs/GaAs axial nanowire heterostructures
by: Paladugu, M, et al.
Published: (2008) -
Zero-bias conductance peak in Dirac semimetal-superconductor devices
by: W. Yu, et al.
Published: (2020-07-01) -
Formation of hierarchical InAs nanoring/GaAs nanowire heterostructures.
by: Paladugu, M, et al.
Published: (2009) -
Growth of straight InAs-on-GaAs nanowire heterostructures
by: Messing, M, et al.
Published: (2011)