Implementing Boolean Logic in Ferroelectric Field‐Effect Transistors

Implementing Boolean Logic in Ferroelectric Field‐Effect Transistors

Abstract A method of using non‐volatile and fast ferroelectric field‐effect transistor (FeFET) devices to realize Boolean logic is proposed. First, the internal states are initialized. Then, the gate and body function as input terminals, which are used to write the states of the device, based on the...

Full description

Bibliographic Details
Main Authors: Yung‐Fang Tan, Kai‐Chun Chang, Tsung‐Ming Tsai, Ting‐Chang Chang, Wen‐Chung Chen, Yu‐Hsuan Yeh, Chung‐Wei Wu, Chao‐Cheng Lin, Simon M. Sze
Format: Article
Language:English
Published: Wiley-VCH 2023-04-01
Series:Advanced Electronic Materials
Subjects:
Boolean logic
computing in memory
FeFETs
ferroelectric random access memory (FeRAM)
Online Access:https://doi.org/10.1002/aelm.202201137

Internet

https://doi.org/10.1002/aelm.202201137

Similar Items